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Title: High temperature efficient, stable Si wafer-based selective solar absorbers

Abstract

Creating selective solar absorber systems using simple, stable structures capable of surviving high temperatures is essential for widespread adoption of efficient, high-temperature solar thermal technologies. In this study, semiconductor-metal tandem selective solar absorbers based on commercially available Si wafers are fabricated and measured at different high temperatures. High selectivity of the devices is obtained at temperature as high as 490 °C, and the structure is demonstrated to be mechanically and thermally stable even at slightly higher temperatures (up to 535 °C). Increased free carrier absorption and lattice absorption of Si are observed at elevated temperatures, which raise thermal re-radiation dramatically. In order to mitigate this effect, a thin Si film-based selective absorber has also been computationally designed and optimized, which is predicted to exhibit even higher thermal transfer efficiency (60–70%) at a wide range of solar concentrations (20–100 suns). In conclusion, the simple structure combined with the mechanical and thermal stability enables the low-cost Si substrate-based selective solar absorber to find wide applications in solar thermal energy conversion systems.

Authors:
ORCiD logo [1];  [1];  [1];  [2]; ORCiD logo [1];  [1]; ORCiD logo [1]
  1. Purdue Univ., West Lafayette, IN (United States)
  2. ETH (Swiss Federal Institute of Technology) Zurich, Zurich (Switzerland)
Publication Date:
Research Org.:
Stanford Univ., CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1466036
Alternate Identifier(s):
OSTI ID: 1361803
Grant/Contract Number:  
EE0004946
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Tian, Hao, Zhou, Zhiguang, Liu, Tianran, Karina, Cindy, Guler, Urcan, Shalaev, Vladimir, and Bermel, Peter. High temperature efficient, stable Si wafer-based selective solar absorbers. United States: N. p., 2017. Web. doi:10.1063/1.4979510.
Tian, Hao, Zhou, Zhiguang, Liu, Tianran, Karina, Cindy, Guler, Urcan, Shalaev, Vladimir, & Bermel, Peter. High temperature efficient, stable Si wafer-based selective solar absorbers. United States. doi:10.1063/1.4979510.
Tian, Hao, Zhou, Zhiguang, Liu, Tianran, Karina, Cindy, Guler, Urcan, Shalaev, Vladimir, and Bermel, Peter. Mon . "High temperature efficient, stable Si wafer-based selective solar absorbers". United States. doi:10.1063/1.4979510. https://www.osti.gov/servlets/purl/1466036.
@article{osti_1466036,
title = {High temperature efficient, stable Si wafer-based selective solar absorbers},
author = {Tian, Hao and Zhou, Zhiguang and Liu, Tianran and Karina, Cindy and Guler, Urcan and Shalaev, Vladimir and Bermel, Peter},
abstractNote = {Creating selective solar absorber systems using simple, stable structures capable of surviving high temperatures is essential for widespread adoption of efficient, high-temperature solar thermal technologies. In this study, semiconductor-metal tandem selective solar absorbers based on commercially available Si wafers are fabricated and measured at different high temperatures. High selectivity of the devices is obtained at temperature as high as 490 °C, and the structure is demonstrated to be mechanically and thermally stable even at slightly higher temperatures (up to 535 °C). Increased free carrier absorption and lattice absorption of Si are observed at elevated temperatures, which raise thermal re-radiation dramatically. In order to mitigate this effect, a thin Si film-based selective absorber has also been computationally designed and optimized, which is predicted to exhibit even higher thermal transfer efficiency (60–70%) at a wide range of solar concentrations (20–100 suns). In conclusion, the simple structure combined with the mechanical and thermal stability enables the low-cost Si substrate-based selective solar absorber to find wide applications in solar thermal energy conversion systems.},
doi = {10.1063/1.4979510},
journal = {Applied Physics Letters},
number = 14,
volume = 110,
place = {United States},
year = {Mon Apr 03 00:00:00 EDT 2017},
month = {Mon Apr 03 00:00:00 EDT 2017}
}

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Works referenced in this record:

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