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Title: Si:SrTiO 3-Al 2O 3-Si:SrTiO 3 multi-dielectric architecture for metal-insulator-metal capacitor applications

Abstract

We present that metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO 3-Al 2O 3-Si:SrTiO 3 multi-dielectric architecture have been fabricated employing a combination of pulsed laser and atomic layer deposition techniques. The voltage linearity, temperature coefficients of capacitance, dielectric and electrical properties upon thickness were studied under a wide range of temperature (200–400 K) and electric field stress (61.5 MV/cm). A high capacitance density of 31 fF/μm 2, a low voltage coefficient of capacitance of 363 ppm/V 2, a low temperature coefficient of capacitance of <644 ppm/K, and an effective dielectric constant of 133 are demonstrated in a MIM capacitor with 1.4 nm capacitance equivalent thickness in a 40 nm thick ultra high-k multi-dielectric stack. Finally, all of these properties make this dielectric architecture of interest for next generation, highly scaled MIM capacitor applications.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2];  [1]
  1. Univ. of Puerto Rico, San Juan, PR (United States). Department of Physics and Institute for Functional Nanomaterials
  2. Univ. of Puerto Rico, San Juan, PR (United States). Department of Physics and Institute for Functional Nanomaterials; Univ. of St. Andrews, Scotland (United Kingdom). School of Chemistry and Physics
Publication Date:
Research Org.:
Univ. of Puerto Rico, San Juan, PR (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1465949
Alternate Identifier(s):
OSTI ID: 1333015
Grant/Contract Number:  
FG02-08ER46526
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Dugu, Sita, Pavunny, Shojan P., Scott, James F., and Katiyar, Ram S. Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications. United States: N. p., 2016. Web. doi:10.1063/1.4968185.
Dugu, Sita, Pavunny, Shojan P., Scott, James F., & Katiyar, Ram S. Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications. United States. doi:10.1063/1.4968185.
Dugu, Sita, Pavunny, Shojan P., Scott, James F., and Katiyar, Ram S. Tue . "Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications". United States. doi:10.1063/1.4968185. https://www.osti.gov/servlets/purl/1465949.
@article{osti_1465949,
title = {Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications},
author = {Dugu, Sita and Pavunny, Shojan P. and Scott, James F. and Katiyar, Ram S.},
abstractNote = {We present that metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture have been fabricated employing a combination of pulsed laser and atomic layer deposition techniques. The voltage linearity, temperature coefficients of capacitance, dielectric and electrical properties upon thickness were studied under a wide range of temperature (200–400 K) and electric field stress (61.5 MV/cm). A high capacitance density of 31 fF/μm2, a low voltage coefficient of capacitance of 363 ppm/V2, a low temperature coefficient of capacitance of <644 ppm/K, and an effective dielectric constant of 133 are demonstrated in a MIM capacitor with 1.4 nm capacitance equivalent thickness in a 40 nm thick ultra high-k multi-dielectric stack. Finally, all of these properties make this dielectric architecture of interest for next generation, highly scaled MIM capacitor applications.},
doi = {10.1063/1.4968185},
journal = {Applied Physics Letters},
number = 21,
volume = 109,
place = {United States},
year = {Tue Nov 22 00:00:00 EST 2016},
month = {Tue Nov 22 00:00:00 EST 2016}
}

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Works referenced in this record:

Electrical conductivity and relaxation in poly(3-hexylthiophene)
journal, November 2009