Multimodal spectromicroscopy of monolayer WS 2 enabled by ultra-clean van der Waals epitaxy

Kastl, C.; Chen, C. T.; Koch, R. J.; Schuler, B.; Kuykendall, T. R.; Bostwick, A.; Jozwiak, C.; Seyller, T.; Rotenberg, E.; Weber-Bargioni, A.; Aloni, S.; Schwartzberg, A. M.

doi:10.1088/2053-1583/aad21c

Title: Multimodal spectromicroscopy of monolayer WS ₂ enabled by ultra-clean van der Waals epitaxy

Journal Article · Wed Jul 25 00:00:00 EDT 2018 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/aad21c· OSTI ID:1461592

Kastl, C.; Chen, C. T.;

; Schuler, B.; Kuykendall, T. R.; Bostwick, A.; Jozwiak, C.; Seyller, T.; Rotenberg, E.; Weber-Bargioni, A.; Aloni, S.;

Van der Waals epitaxy enables the integration of 2D transition metal dichalcogenides with other layered materials to form heterostructures with atomically sharp interfaces. However, the ability to fully utilize and understand these materials using surface science techniques such as angle resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) requires low defect, large area, epitaxial coverage with ultra-clean interfaces. We have developed a chemical vapor deposition van der Waals epitaxy growth process where the metal and chalcogen sources are separated such that growth times can be extended significantly to yield high coverage while minimizing surface contamination. We also demonstrate the growth of high quality 2D WS₂ over large areas on graphene. The as-grown vertical heterostructures are exceptionally clean as demonstrated by ARPES, STM and spatially resolved photoluminescence mapping. With these correlated techniques we are able to relate defect density to electronic band structure and, ultimately, optical properties. We find that our synthetic approach provides ultra-clean, low defect density (~10¹² cm^-2), ~10 μm large WS₂ monolayer crystals, with an electronic band structure and valence band effective masses that perfectly match the theoretical prediction for pristine WS₂.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Swiss National Science Foundation (SNSF)

Grant/Contract Number:: AC02-05CH11231; P2SKP2_171770

OSTI ID:: 1461592

Alternate ID(s):: OSTI ID: 1465470

Journal Information:: 2D Materials, Journal Name: 2D Materials Vol. 5 Journal Issue: 4; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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Cited by: 34 works

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Title: Multimodal spectromicroscopy of monolayer WS 2 enabled by ultra-clean van der Waals epitaxy

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References (48)

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Title: Multimodal spectromicroscopy of monolayer WS ₂ enabled by ultra-clean van der Waals epitaxy