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Title: Strain-induced high-temperature perovskite ferromagnetic insulator

Abstract

Ferromagnetic insulators are required for many new magnetic devices, such as dissipationless quantum-spintronic devices, magnetic tunneling junctions, etc. Ferromagnetic insulators with a high Curie temperature and a high-symmetry structure are critical integration with common single-crystalline oxide films or substrates. So far, the commonly used ferromagnetic insulators mostly possess low-symmetry structures associated with a poor growth quality and widespread properties. The few known high-symmetry materials either have extremely low Curie temperatures (≤16 K), or require chemical doping of an otherwise antiferromagnetic matrix. Here we present compelling evidence that the LaCoO 3 single-crystalline thin film under tensile strain is a rare undoped perovskite ferromagnetic insulator with a remarkably high T C of up to 90 K. Both experiments and first-principles calculations demonstrate tensile-strain-induced ferromagnetism which does not exist in bulk LaCoO 3. The ferromagnetism is strongest within a nearly stoichiometric structure, disappearing when the Co 2+ defect concentration reaches about 10%. Furthermore, significant impact of the research includes demonstration of a strain-induced high-temperature ferromagnetic insulator, successful elevation of the transition over the liquid-nitrogen temperature, and high potential for integration into large-area device fabrication processes.

Authors:
 [1];  [2];  [3];  [1];  [1];  [4];  [1];  [1];  [1];  [1];  [1];  [5];  [1];  [6];  [7];  [8]
  1. Univ. of Science and Technology of China, Anhui (People's Republic of China)
  2. Univ. of Science and Technology of China, Anhui (People's Republic of China); Chinese Academy of Sciences, Anhui (People's Republic of China)
  3. Univ. of Science and Technology of China, Anhui (People's Republic of China); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  4. Shaanxi Normal Univ., Shaanxi (People's Republic of China)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Santa Cruz, CA (United States)
  6. Wright-Patterson Air Force Base (AFB), Wright-Patterson AFB, OH (United States)
  7. US Air Force Academy, CO (United States)
  8. Univ. of Science and Technology of China, Anhui (People's Republic of China); Wright-Patterson Air Force Base (AFB), Wright-Patterson AFB, OH (United States); US Air Force Academy, CO (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1465448
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Volume: 115; Journal Issue: 12; Related Information: © 2018 National Academy of Sciences. All rights reserved.; Journal ID: ISSN 0027-8424
Publisher:
National Academy of Sciences, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ferromagnetic insulator; strain; defect; pulsed-laser deposition; X-ray absorption

Citation Formats

Meng, Dechao, Guo, Hongli, Cui, Zhangzhang, Ma, Chao, Zhao, Jin, Lu, Jiangbo, Xu, Hui, Wang, Zhicheng, Hu, Xiang, Fu, Zhengping, Peng, Ranran, Guo, Jinghua, Zhai, Xiaofang, Brown, Gail J., Knize, Randy, and Lu, Yalin. Strain-induced high-temperature perovskite ferromagnetic insulator. United States: N. p., 2018. Web. doi:10.1073/pnas.1707817115.
Meng, Dechao, Guo, Hongli, Cui, Zhangzhang, Ma, Chao, Zhao, Jin, Lu, Jiangbo, Xu, Hui, Wang, Zhicheng, Hu, Xiang, Fu, Zhengping, Peng, Ranran, Guo, Jinghua, Zhai, Xiaofang, Brown, Gail J., Knize, Randy, & Lu, Yalin. Strain-induced high-temperature perovskite ferromagnetic insulator. United States. doi:10.1073/pnas.1707817115.
Meng, Dechao, Guo, Hongli, Cui, Zhangzhang, Ma, Chao, Zhao, Jin, Lu, Jiangbo, Xu, Hui, Wang, Zhicheng, Hu, Xiang, Fu, Zhengping, Peng, Ranran, Guo, Jinghua, Zhai, Xiaofang, Brown, Gail J., Knize, Randy, and Lu, Yalin. Mon . "Strain-induced high-temperature perovskite ferromagnetic insulator". United States. doi:10.1073/pnas.1707817115. https://www.osti.gov/servlets/purl/1465448.
@article{osti_1465448,
title = {Strain-induced high-temperature perovskite ferromagnetic insulator},
author = {Meng, Dechao and Guo, Hongli and Cui, Zhangzhang and Ma, Chao and Zhao, Jin and Lu, Jiangbo and Xu, Hui and Wang, Zhicheng and Hu, Xiang and Fu, Zhengping and Peng, Ranran and Guo, Jinghua and Zhai, Xiaofang and Brown, Gail J. and Knize, Randy and Lu, Yalin},
abstractNote = {Ferromagnetic insulators are required for many new magnetic devices, such as dissipationless quantum-spintronic devices, magnetic tunneling junctions, etc. Ferromagnetic insulators with a high Curie temperature and a high-symmetry structure are critical integration with common single-crystalline oxide films or substrates. So far, the commonly used ferromagnetic insulators mostly possess low-symmetry structures associated with a poor growth quality and widespread properties. The few known high-symmetry materials either have extremely low Curie temperatures (≤16 K), or require chemical doping of an otherwise antiferromagnetic matrix. Here we present compelling evidence that the LaCoO3 single-crystalline thin film under tensile strain is a rare undoped perovskite ferromagnetic insulator with a remarkably high TC of up to 90 K. Both experiments and first-principles calculations demonstrate tensile-strain-induced ferromagnetism which does not exist in bulk LaCoO3. The ferromagnetism is strongest within a nearly stoichiometric structure, disappearing when the Co2+ defect concentration reaches about 10%. Furthermore, significant impact of the research includes demonstration of a strain-induced high-temperature ferromagnetic insulator, successful elevation of the transition over the liquid-nitrogen temperature, and high potential for integration into large-area device fabrication processes.},
doi = {10.1073/pnas.1707817115},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 12,
volume = 115,
place = {United States},
year = {Mon Mar 05 00:00:00 EST 2018},
month = {Mon Mar 05 00:00:00 EST 2018}
}

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