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Title: Structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4976206· OSTI ID:1465328
 [1];  [2];  [2]; ORCiD logo [2];  [3];  [4];  [4];  [5];  [6];  [7];  [7];  [2];  [2]
  1. Univ. of Notre Dame, IN (United States). Dept. of Physics. Dept. of Electrical Engineering
  2. Univ. of Notre Dame, IN (United States). Dept. of Physics
  3. Univ. of Notre Dame, IN (United States). Dept. of Electrical Engineering. Notre Dame Integrated Imaging Facility
  4. Univ. Grenoble Alpes (France). Inst. Néel
  5. Univ. of Notre Dame, IN (United States). Radiation Lab. Dept. of Chemistry and Biochemistry
  6. Univ. of Notre Dame, IN (United States). Dept. of Physics. Radiation Lab.
  7. Arizona State Univ., Tempe, AZ (United States). Dept. of Physics

In this paper, we describe the structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy on GaAs (111) substrates, as revealed by transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. When the Mn concentration is increased, the lattice of the ternary (Sn,Mn)Se films evolves quasi-coherently from a SnSe2 two-dimensional (2D) crystal structure into a more complex quasi-2D lattice rearrangement, ultimately transforming into the magnetically concentrated antiferromagnetic MnSe 3D rock-salt structure as Mn approaches 50 at. % of this material. Finally, these structural transformations are expected to underlie the evolution of magnetic properties of this ternary system reported earlier in the literature.

Research Organization:
Univ. of Notre Dame, IN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); National Natural Science Foundation of China (NSFC)
Grant/Contract Number:
FC02-04ER15533; DMR 14-00432; DMR 14-33490; 51302257
OSTI ID:
1465328
Journal Information:
Journal of Applied Physics, Vol. 121, Issue 7; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

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Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates journal November 2016

Cited By (1)

Non-Dirac Chern insulators with large band gaps and spin-polarized edge states journal January 2018