Phase-transition–induced p-n junction in single halide perovskite nanowire
- Department of Chemistry, University of California, Berkeley, CA 94720,
- Department of Mechanical Engineering, University of Hawaii at Manoa, Honolulu, HI 96822,
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
- Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
- School of Physical Science and Technology, ShanghaiTech University, 201210 Shanghai, China,
- Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Department of Physics, University of California, Berkeley, CA 94720,, Kavli Energy NanoScience Institute, Berkeley, CA 94720,, Molecular Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
- Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Kavli Energy NanoScience Institute, Berkeley, CA 94720,, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1465256
- Alternate ID(s):
- OSTI ID: 1530375
- Journal Information:
- Proceedings of the National Academy of Sciences of the United States of America, Journal Name: Proceedings of the National Academy of Sciences of the United States of America Vol. 115 Journal Issue: 36; ISSN 0027-8424
- Publisher:
- Proceedings of the National Academy of SciencesCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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