Studies on structural, optical, magnetic, and resistive switching properties of doped BiFe1-xCrxO3 thin films

Sharma, Y.; Martinez, R.; Agarwal, R.; Barrionuevo, D.; Katiyar, R. K.; Kumar, A.; Katiyar, R. S.

doi:10.1063/1.4967993

Title: Studies on structural, optical, magnetic, and resistive switching properties of doped BiFe_1-xCr_xO₃ thin films

Journal Article · Thu Nov 17 00:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4967993· OSTI ID:1465124

^[1]; Martinez, R. ^[2]; Agarwal, R. ^[1]; Barrionuevo, D. ^[1]; Katiyar, R. K. ^[1]; Kumar, A. ^[3]; Katiyar, R. S. ^[1]

Univ. of Puerto Rico, San Juan, PR (United States). Dept. of Physics and Inst. for Functional Nanomaterials
Univ. of Puerto Rico, San Juan, PR (United States). Dept. of Physics, Dept. of Mathematics, and Inst. for Functional Nanomaterials
Council of Scientific and Industrial Research (CSIR)-National Physical Lab., New Delhi (India)

Here, we report the effect of multivalent Cr-ion doping on the structural, optical, magnetic, and resistive switching properties of BiFe_1-xCr_xO₃ (BFCO) thin films (where, 0 ≤ x ≤ 0.15). BFCO thin films were deposited on Pt/TiO₂/SiO₂/Si (100) substrate using pulsed laser deposition technique. X-ray diffraction and micro-Raman analysis revealed the presence of a secondary phase in BFCO thin films, above 5% Cr doping concentrations. Enhanced magnetization was observed in BFCO films owing to ferromagnetic superexchange interaction between Fe and Cr-ions. X-ray photoelectron spectroscopy measurements revealed the multivalent states of Cr and Fe-ions, where suppression of oxygen vacancies due to Cr-ion doping in BFCO films was discussed based on the defect chemistry viewpoint. Moreover, current conduction and resistive switching properties were studied and the dominant switching mechanism was explained in the light of oxygen vacancies assisted filamentary conduction model.

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Research Organization:: Univ. of Puerto Rico, San Juan, PR (United States)

Sponsoring Organization:: USDOE; National Science Foundation (NSF)

Grant/Contract Number:: FG02-08ER46526; NSF-RII-0701525

OSTI ID:: 1465124

Journal Information:: Journal of Applied Physics, Vol. 120, Issue 19; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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Modulation of oxygen vacancies assisted ferroelectric and photovoltaic properties of (Nd, V) co-doped BiFeO ₃ thin films Agarwal, Radhe; Sharma, Yogesh; Hong, Seungbum Journal of Physics D: Applied Physics, Vol. 51, Issue 27 https://doi.org/10.1088/1361-6463/aac505	journal	June 2018

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75 CONDENSED MATTER PHYSICS
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Title: Studies on structural, optical, magnetic, and resistive switching properties of doped BiFe1-xCrxO3 thin films

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Title: Studies on structural, optical, magnetic, and resistive switching properties of doped BiFe_1-xCr_xO₃ thin films