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Title: Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency

Abstract

Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors. The two recently launched programs by ARPA-E (CIRCUITS and PNDIODES) continue to investigate the use of WBG semiconductors in power electronics. From materials and devices to modules and circuits to application-ready systems integration, ARPA-E projects have demonstrated the potential of WBG semiconductors to lower the cost of high-efficiency power electronics to enable broad adoption in energy applications.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]
  1. Dept. of Energy (DOE), Washington DC (United States)
Publication Date:
Research Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Sponsoring Org.:
USDOE
OSTI Identifier:
1464211
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE

Citation Formats

Kizilyalli, Isik C., Carlson, Eric P., Cunningham, Daniel W., Manser, Joseph S., Xu, Yanzhi Ann, and Liu, Alan Y. Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency. United States: N. p., 2018. Web. doi:10.2172/1464211.
Kizilyalli, Isik C., Carlson, Eric P., Cunningham, Daniel W., Manser, Joseph S., Xu, Yanzhi Ann, & Liu, Alan Y. Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency. United States. doi:10.2172/1464211.
Kizilyalli, Isik C., Carlson, Eric P., Cunningham, Daniel W., Manser, Joseph S., Xu, Yanzhi Ann, and Liu, Alan Y. Tue . "Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency". United States. doi:10.2172/1464211. https://www.osti.gov/servlets/purl/1464211.
@article{osti_1464211,
title = {Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency},
author = {Kizilyalli, Isik C. and Carlson, Eric P. and Cunningham, Daniel W. and Manser, Joseph S. and Xu, Yanzhi Ann and Liu, Alan Y.},
abstractNote = {Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors. The two recently launched programs by ARPA-E (CIRCUITS and PNDIODES) continue to investigate the use of WBG semiconductors in power electronics. From materials and devices to modules and circuits to application-ready systems integration, ARPA-E projects have demonstrated the potential of WBG semiconductors to lower the cost of high-efficiency power electronics to enable broad adoption in energy applications.},
doi = {10.2172/1464211},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}