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Title: High-Field Magnetoresistance of Organic Semiconductors

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Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Name: Physical Review Applied Journal Volume: 10 Journal Issue: 2; Journal ID: ISSN 2331-7019
American Physical Society
Country of Publication:
United States

Citation Formats

Joshi, G., Teferi, M. Y., Miller, R., Jamali, S., Groesbeck, M., van Tol, J., McLaughlin, R., Vardeny, Z. V., Lupton, J. M., Malissa, H., and Boehme, C. High-Field Magnetoresistance of Organic Semiconductors. United States: N. p., 2018. Web. doi:10.1103/PhysRevApplied.10.024008.
Joshi, G., Teferi, M. Y., Miller, R., Jamali, S., Groesbeck, M., van Tol, J., McLaughlin, R., Vardeny, Z. V., Lupton, J. M., Malissa, H., & Boehme, C. High-Field Magnetoresistance of Organic Semiconductors. United States. doi:10.1103/PhysRevApplied.10.024008.
Joshi, G., Teferi, M. Y., Miller, R., Jamali, S., Groesbeck, M., van Tol, J., McLaughlin, R., Vardeny, Z. V., Lupton, J. M., Malissa, H., and Boehme, C. Thu . "High-Field Magnetoresistance of Organic Semiconductors". United States. doi:10.1103/PhysRevApplied.10.024008.
title = {High-Field Magnetoresistance of Organic Semiconductors},
author = {Joshi, G. and Teferi, M. Y. and Miller, R. and Jamali, S. and Groesbeck, M. and van Tol, J. and McLaughlin, R. and Vardeny, Z. V. and Lupton, J. M. and Malissa, H. and Boehme, C.},
abstractNote = {},
doi = {10.1103/PhysRevApplied.10.024008},
journal = {Physical Review Applied},
issn = {2331-7019},
number = 2,
volume = 10,
place = {United States},
year = {2018},
month = {8}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevApplied.10.024008

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Cited by: 2 works
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