Top-Down Etching of Three-Dimensional High Aspect Ratio GaN Nanostructures (invited).
Conference
·
OSTI ID:1463429
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, null
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1463429
- Report Number(s):
- SAND2017-8157C; 655835
- Resource Relation:
- Conference: Proposed for presentation at the ACCGE-21/OMVPE-18 held July 30 - August 4, 2017 in Santa Fe, NM.
- Country of Publication:
- United States
- Language:
- English
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