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Title: Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy

Abstract

Zn(O,S) buffer layer electronic configuration is determined by its composition and thickness, tunable through atomic layer deposition. The Zn K and L-edges in the X-ray absorption near edge structure verify ionicity and covalency changes with S content. A high intensity shoulder in the Zn K-edge indicates strong Zn 4s hybridized states and a preferred c-axis orientation. 2–3 nm thick films with low S content show a subdued shoulder showing less contribution from Zn 4s hybridization. Here, a lower energy shift with film thickness suggests a decreasing bandgap. Further, ZnSO 4 forms at substrate interfaces, which may be detrimental for device performance.

Authors:
 [1];  [1];  [1];  [2];  [3];  [3];  [3];  [1]; ORCiD logo [4]
  1. Stanford Univ., Stanford, CA (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  3. Norwegian Univ. of Science and Technology, Trondheim (Norway)
  4. Stanford Univ., Stanford, CA (United States); Norwegian Univ. of Science and Technology, Trondheim (Norway)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1463312
Grant/Contract Number:  
AC02-76SF00515; J3505-N20
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 9; Journal Issue: 45; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; atomic layer deposition (ALD); buffer layers; oxysulfide films; X-ray absorption near edge structure (XANES); Zn(O,S)

Citation Formats

Dadlani, Anup, Acharya, Shinjita, Trejo, Orlando, Nordlund, Dennis, Peron, Mirco, Razavi, Javad, Berto, Filippo, Prinz, Fritz B., and Torgersen, Jan. Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy. United States: N. p., 2017. Web. doi:10.1021/acsami.7b06728.
Dadlani, Anup, Acharya, Shinjita, Trejo, Orlando, Nordlund, Dennis, Peron, Mirco, Razavi, Javad, Berto, Filippo, Prinz, Fritz B., & Torgersen, Jan. Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy. United States. doi:10.1021/acsami.7b06728.
Dadlani, Anup, Acharya, Shinjita, Trejo, Orlando, Nordlund, Dennis, Peron, Mirco, Razavi, Javad, Berto, Filippo, Prinz, Fritz B., and Torgersen, Jan. Mon . "Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy". United States. doi:10.1021/acsami.7b06728. https://www.osti.gov/servlets/purl/1463312.
@article{osti_1463312,
title = {Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy},
author = {Dadlani, Anup and Acharya, Shinjita and Trejo, Orlando and Nordlund, Dennis and Peron, Mirco and Razavi, Javad and Berto, Filippo and Prinz, Fritz B. and Torgersen, Jan},
abstractNote = {Zn(O,S) buffer layer electronic configuration is determined by its composition and thickness, tunable through atomic layer deposition. The Zn K and L-edges in the X-ray absorption near edge structure verify ionicity and covalency changes with S content. A high intensity shoulder in the Zn K-edge indicates strong Zn 4s hybridized states and a preferred c-axis orientation. 2–3 nm thick films with low S content show a subdued shoulder showing less contribution from Zn 4s hybridization. Here, a lower energy shift with film thickness suggests a decreasing bandgap. Further, ZnSO4 forms at substrate interfaces, which may be detrimental for device performance.},
doi = {10.1021/acsami.7b06728},
journal = {ACS Applied Materials and Interfaces},
issn = {1944-8244},
number = 45,
volume = 9,
place = {United States},
year = {2017},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
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