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Title: Activation of buried p-GaN in MOCVD-regrown vertical structures

Authors:
 [1];  [1];  [1];  [1]; ORCiD logo [1];  [1];  [2];  [3];  [3];  [4]; ORCiD logo [4]
  1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
  2. IQE RF LLC, Somerset, New Jersey 08873, USA
  3. Qorvo, Inc., Richardson, Texas 75080, USA
  4. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA, Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1463218
Grant/Contract Number:  
AR0000454
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 113 Journal Issue: 6; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, and Xing, Huili Grace. Activation of buried p-GaN in MOCVD-regrown vertical structures. United States: N. p., 2018. Web. doi:10.1063/1.5041879.
Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, & Xing, Huili Grace. Activation of buried p-GaN in MOCVD-regrown vertical structures. United States. doi:10.1063/1.5041879.
Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, and Xing, Huili Grace. Mon . "Activation of buried p-GaN in MOCVD-regrown vertical structures". United States. doi:10.1063/1.5041879.
@article{osti_1463218,
title = {Activation of buried p-GaN in MOCVD-regrown vertical structures},
author = {Li, Wenshen and Nomoto, Kazuki and Lee, Kevin and Islam, S. M. and Hu, Zongyang and Zhu, Mingda and Gao, Xiang and Xie, Jinqiao and Pilla, Manyam and Jena, Debdeep and Xing, Huili Grace},
abstractNote = {},
doi = {10.1063/1.5041879},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 6,
volume = 113,
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on August 7, 2019
Publisher's Accepted Manuscript

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Works referenced in this record:

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
journal, March 1994

  • Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
  • Applied Physics Letters, Vol. 64, Issue 13, p. 1687-1689
  • DOI: 10.1063/1.111832