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Title: Study of charge transport properties in a ZnO/CdS/Cu(In,Ga)Se 2 solar cell via admittance spectroscopy

Abstract

The authors investigate the charge carrier transport properties in a thin-film heterojunction Cu(In,Ga)Se 2 (CIGS) solar cell device via coordinated capacitance-voltage and admittance spectroscopic measurements. The CIGS absorber width was measured using temperature dependent depletion width in the freeze-out regime and its acceptor density extracted from conventional capacitance-voltage analysis in the non-freeze-out regime. The bias-dependent modified dielectric relaxation in the Cu(In,Ga)Se 2 solar cell was exploited to extract the absorber's resistivity, hole mobility, and their temperature dependency, all by admittance spectroscopy. In the temperature range of 133-300 K, the extracted hole mobility in the CIGS device increases from 7.55 x 10 -3 to 4.08 cm 2/Vs with temperature. The temperature dependent resistivity and mobility show Arrhenius behavior with an activation energy ~120 meV. The thermally activated behavior of mobility is related to the potential fluctuation encountered by the holes during their transport, which enables admittance spectroscopy to directly measure the potential fluctuation in the CIGS polycrystalline material.

Authors:
 [1];  [1];  [2];  [3]
  1. Texas State Univ., San Marcos, TX (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Texas State Univ., San Marcos, TX (United States); National Cheng Kung Univ., Tainan City (Taiwan)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot Initiative; USDOE
OSTI Identifier:
1463078
Alternate Identifier(s):
OSTI ID: 1420350
Report Number(s):
NREL/JA-5K00-72062
Journal ID: ISSN 2166-2746
Grant/Contract Number:  
AC36-08GO28308; EE-0007541
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 36; Journal Issue: 2; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; dielectrics; spectroscopy; electronic transport; metalloids; polycrystals; thin films; activation energies; heterojunctions

Citation Formats

Paul, Sanjoy, Lopez, Roberto, Repins, Ingrid L., and Li, Jian V. Study of charge transport properties in a ZnO/CdS/Cu(In,Ga)Se2 solar cell via admittance spectroscopy. United States: N. p., 2018. Web. doi:10.1116/1.5013046.
Paul, Sanjoy, Lopez, Roberto, Repins, Ingrid L., & Li, Jian V. Study of charge transport properties in a ZnO/CdS/Cu(In,Ga)Se2 solar cell via admittance spectroscopy. United States. doi:10.1116/1.5013046.
Paul, Sanjoy, Lopez, Roberto, Repins, Ingrid L., and Li, Jian V. Tue . "Study of charge transport properties in a ZnO/CdS/Cu(In,Ga)Se2 solar cell via admittance spectroscopy". United States. doi:10.1116/1.5013046.
@article{osti_1463078,
title = {Study of charge transport properties in a ZnO/CdS/Cu(In,Ga)Se2 solar cell via admittance spectroscopy},
author = {Paul, Sanjoy and Lopez, Roberto and Repins, Ingrid L. and Li, Jian V.},
abstractNote = {The authors investigate the charge carrier transport properties in a thin-film heterojunction Cu(In,Ga)Se2 (CIGS) solar cell device via coordinated capacitance-voltage and admittance spectroscopic measurements. The CIGS absorber width was measured using temperature dependent depletion width in the freeze-out regime and its acceptor density extracted from conventional capacitance-voltage analysis in the non-freeze-out regime. The bias-dependent modified dielectric relaxation in the Cu(In,Ga)Se2 solar cell was exploited to extract the absorber's resistivity, hole mobility, and their temperature dependency, all by admittance spectroscopy. In the temperature range of 133-300 K, the extracted hole mobility in the CIGS device increases from 7.55 x 10-3 to 4.08 cm2/Vs with temperature. The temperature dependent resistivity and mobility show Arrhenius behavior with an activation energy ~120 meV. The thermally activated behavior of mobility is related to the potential fluctuation encountered by the holes during their transport, which enables admittance spectroscopy to directly measure the potential fluctuation in the CIGS polycrystalline material.},
doi = {10.1116/1.5013046},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 2,
volume = 36,
place = {United States},
year = {Tue Feb 13 00:00:00 EST 2018},
month = {Tue Feb 13 00:00:00 EST 2018}
}

Journal Article:
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