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Title: Strain-Induced Spin-Resonance Shifts in Silicon Devices

Abstract

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

Authors:
 [1];  [2];  [3];  [4];  [1];  [5];  [5];  [1];  [6];  [4];  [2]
  1. Univ. of New South Wales, Sydney, NSW (Australia). School of Electrical Engineering and Telecommunications
  2. Univ. Paris-Saclay, Commissariat a l'Energie Atomique et aux Energies Alternatives (CEA), Saclay (France). Quantronics Group
  3. Istituto Italiano di Tecnologia (IIT), Rovereto (Italy). Center for Neuroscience and Cognitive Systems; Univ. of St. Andrews, Scotland (United Kingdom). SUPA, School of Physics and Astronomy
  4. Univ. College London (United Kingdom). London Centre for Nanotechnology
  5. Univ. of Grenoble Alpes (France)
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Accelerator Technology and Applies Physics Division
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1462970
Alternate Identifier(s):
OSTI ID: 1432585
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 9; Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Pla, J. J., Bienfait, A., Pica, G., Mansir, J., Mohiyaddin, F. A., Zeng, Z., Niquet, Y. M., Morello, A., Schenkel, T., Morton, J. J. L., and Bertet, P. Strain-Induced Spin-Resonance Shifts in Silicon Devices. United States: N. p., 2018. Web. doi:10.1103/PhysRevApplied.9.044014.
Pla, J. J., Bienfait, A., Pica, G., Mansir, J., Mohiyaddin, F. A., Zeng, Z., Niquet, Y. M., Morello, A., Schenkel, T., Morton, J. J. L., & Bertet, P. Strain-Induced Spin-Resonance Shifts in Silicon Devices. United States. doi:10.1103/PhysRevApplied.9.044014.
Pla, J. J., Bienfait, A., Pica, G., Mansir, J., Mohiyaddin, F. A., Zeng, Z., Niquet, Y. M., Morello, A., Schenkel, T., Morton, J. J. L., and Bertet, P. Tue . "Strain-Induced Spin-Resonance Shifts in Silicon Devices". United States. doi:10.1103/PhysRevApplied.9.044014.
@article{osti_1462970,
title = {Strain-Induced Spin-Resonance Shifts in Silicon Devices},
author = {Pla, J. J. and Bienfait, A. and Pica, G. and Mansir, J. and Mohiyaddin, F. A. and Zeng, Z. and Niquet, Y. M. and Morello, A. and Schenkel, T. and Morton, J. J. L. and Bertet, P.},
abstractNote = {In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.},
doi = {10.1103/PhysRevApplied.9.044014},
journal = {Physical Review Applied},
number = 4,
volume = 9,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2018},
month = {Tue Apr 10 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on April 10, 2019
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Cited by: 3 works
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