Silicon compatible Sn-based resistive switching memory

Sonde, Sushant; Chakrabarti, Bhaswar; Liu, Yuzi; Sasikumar, Kiran; Lin, Jianqiang; Stan, Liliana; Divan, Ralu; Ocola, Leonidas E.; Rosenmann, Daniel; Choudhury, Pabitra; Ni, Kai; Sankaranarayanan, Subramanian K.  R.  S.; Datta, Suman; Guha, Supratik

doi:10.1039/c8nr01540f

Title: Silicon compatible Sn-based resistive switching memory

Journal Article · Tue Apr 17 00:00:00 EDT 2018 · Nanoscale

DOI:https://doi.org/10.1039/c8nr01540f· OSTI ID:1461456

^[1]; Chakrabarti, Bhaswar ^[1]; Liu, Yuzi ^[2]; Sasikumar, Kiran ^[2]; Lin, Jianqiang ^[2]; Stan, Liliana ^[2]; Divan, Ralu ^[2]; Ocola, Leonidas E. ^[2]; Rosenmann, Daniel ^[2]; Choudhury, Pabitra ^[3]; Ni, Kai ^[4]; Sankaranarayanan, Subramanian K. R. S. ^[2]; Datta, Suman ^[4]; Guha, Supratik ^[1]

Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
New Mexico Inst. of Mining and Technology, Socorro, NM (United States). Chemical Engineering and Materials Engineering Dept.
Univ. of Notre Dame, IN (United States). Dept. of Electrical Engineering

Large banks of cheap, fast, non-volatile, energy efficient, scalable solid-state memories are an increasingly essential component for today's data intensive computing. Conductive-bridge random access memory (CBRAM) – which involves voltage driven formation and dissolution of Cu or Ag filaments in a Cu (or Ag) anode/dielectric (HfO₂ or Al₂O₃)/inert cathode device – possesses the necessary attributes to fit the requirements. Cu and Ag are, however, fast diffusers and known contaminants in silicon microelectronics. In this paper, employing a criterion for electrode metal selection applicable to cationic filamentary devices and using first principles calculations for estimating diffusion barriers in HfO₂, we identify tin (Sn) as a rational, silicon CMOS compatible replacement for Cu and Ag anodes in CBRAM devices. We then experimentally fabricate Sn based CBRAM devices and demonstrate very fast, steep-slope memory switching as well as threshold switching, comparable to Cu or Ag based devices. Furthermore, time evolution of the cationic filament formation along with the switching mechanism is discussed based on time domain measurements (I vs. t) carried out under constant voltage stress. Finally, the time to threshold is shown to be a function of both the voltage stress (V_stress) as well as the initial leakage current (I₀) through the device.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Semiconductor Research Corporation (SRC) (United States)

Grant/Contract Number:: AC02-06CH11357; 1640081

OSTI ID:: 1461456

Alternate ID(s):: OSTI ID: 1434172

Journal Information:: Nanoscale, Vol. 10, Issue 20; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 19 works

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