skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing

Abstract

Here in this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided into groups and underwent different thermal processing, consisting of phosphorus diffusion gettering and surface passivation with hydrogen rich layers. After these thermal treatments, wafers were processed into heterojunction with intrinsic thin layer solar cells. Light Beam Induced Current and Electron Backscatter Diffraction were applied to analyse the influence of thermal treatment during standard solar cell processing on different types of grain boundaries. The results show that after cell processing, most random-angle grain boundaries in the material are well passivated, but small-angle grain boundaries are not well passivated. Special cases of coincidence site lattice grain boundaries with high recombination activity are also found. Based on micro-X-ray fluorescence measurements, a change in the contamination level is suggested as the reason behind their increased activity. Published by AIP Publishing.

Authors:
 [1];  [2];  [3]; ORCiD logo [4];  [4];  [5];  [6];  [1]
  1. Norwegian Univ. of Science and Technology (NTNU),Trondheim (Norway). Dept. of Materials Science and Engineering
  2. Inst. for Energy Technology (IFE), Kjeller (Norway). Dept. for Solar Energy
  3. SINTEF Materials and Chemistry, Trondheim (Norway)
  4. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  5. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  6. Karlstad Univ., Karlstad (Sweden)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Norwegian Research Council (NRC)
OSTI Identifier:
1461333
Grant/Contract Number:  
AC02-06CH11357; 1122374
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 5; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Adamczyk, Krzysztof, Søndenå, Rune, Stokkan, Gaute, Looney, Erin, Jensen, Mallory, Lai, Barry, Rinio, Markus, and Di Sabatino, Marisa. Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing. United States: N. p., 2018. Web. doi:10.1063/1.5018797.
Adamczyk, Krzysztof, Søndenå, Rune, Stokkan, Gaute, Looney, Erin, Jensen, Mallory, Lai, Barry, Rinio, Markus, & Di Sabatino, Marisa. Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing. United States. doi:10.1063/1.5018797.
Adamczyk, Krzysztof, Søndenå, Rune, Stokkan, Gaute, Looney, Erin, Jensen, Mallory, Lai, Barry, Rinio, Markus, and Di Sabatino, Marisa. Wed . "Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing". United States. doi:10.1063/1.5018797. https://www.osti.gov/servlets/purl/1461333.
@article{osti_1461333,
title = {Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing},
author = {Adamczyk, Krzysztof and Søndenå, Rune and Stokkan, Gaute and Looney, Erin and Jensen, Mallory and Lai, Barry and Rinio, Markus and Di Sabatino, Marisa},
abstractNote = {Here in this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided into groups and underwent different thermal processing, consisting of phosphorus diffusion gettering and surface passivation with hydrogen rich layers. After these thermal treatments, wafers were processed into heterojunction with intrinsic thin layer solar cells. Light Beam Induced Current and Electron Backscatter Diffraction were applied to analyse the influence of thermal treatment during standard solar cell processing on different types of grain boundaries. The results show that after cell processing, most random-angle grain boundaries in the material are well passivated, but small-angle grain boundaries are not well passivated. Special cases of coincidence site lattice grain boundaries with high recombination activity are also found. Based on micro-X-ray fluorescence measurements, a change in the contamination level is suggested as the reason behind their increased activity. Published by AIP Publishing.},
doi = {10.1063/1.5018797},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 123,
place = {United States},
year = {2018},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Save / Share: