Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Yang, Shuzhen; Peng, Ren‐Ci; He, Qing; Huang, Yen‐Lin; Huang, Yijing; Yang, Jan‐Chi; Chen, Tianzhe; Guo, Jingwen; Chen, Long‐Qing; Chu, Ying‐Hao; Nan, Ce‐Wen; Yu, Pu

doi:10.1002/andp.201800130

Title: Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Journal Article · Sun Jul 15 00:00:00 EDT 2018 · Annalen der Physik (Leipzig)

DOI:https://doi.org/10.1002/andp.201800130· OSTI ID:1460462

Yang, Shuzhen ^[1]; Peng, Ren‐Ci ^[2]; He, Qing ^[3]; Huang, Yen‐Lin ^[4]; Huang, Yijing ^[1]; Yang, Jan‐Chi ^[5]; Chen, Tianzhe ^[1]; Guo, Jingwen ^[1]; Chen, Long‐Qing ^[6]; Chu, Ying‐Hao ^[4]; Nan, Ce‐Wen ^[2]; Yu, Pu ^[7]

State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China
State Key Lab of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China
Department of Physics Durham University Durham DH1 3LE UK
Department of Materials Science and Engineering National Chiao Tung University Hsinchu 30010 Taiwan
Department of Physics National Cheng Kung University Tainan 70101 Taiwan
State Key Lab of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China, Department of Materials Science and Engineering Pennsylvania State University University Park PA 16802 USA
State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China, Collaborative Innovation Center of Quantum Matter Beijing 100084 China, RIKEN Center for Emergent Matter Science Wako 351‐198 Japan

Abstract Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well‐aligned 71° nonpolar domain walls in BiFeO ₃ . Such an interfacial conductivity is induced by the creation of up‐polarized nano‐domains near the 71° domain walls, as revealed by the combination of the piezo‐response force microscopy (PFM) and conducting atomic force microscopy (c‐AFM) imaging techniques, as well as phase‐field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.

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Sponsoring Organization:: USDOE

OSTI ID:: 1460462

Journal Information:: Annalen der Physik (Leipzig), Journal Name: Annalen der Physik (Leipzig) Vol. 530 Journal Issue: 8; ISSN 0003-3804

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 5 works

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