Valley dependent anisotropic spin splitting in silicon quantum dots

Ferdous, Rifat; Kawakami, Erika; Scarlino, Pasquale; Nowak, Michal P.; Ward, D. R.; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Friesen, Mark; Eriksson, Mark A.; Vandersypen, Lieven M.  K.; Rahman, Rajib

doi:10.1038/s41534-018-0075-1

Title: Valley dependent anisotropic spin splitting in silicon quantum dots

Journal Article · Tue Jun 05 00:00:00 EDT 2018 · npj Quantum Information

DOI:https://doi.org/10.1038/s41534-018-0075-1· OSTI ID:1460097

^[1]; Kawakami, Erika ^[2]; Scarlino, Pasquale ^[2]; Nowak, Michal P. ^[3]; Ward, D. R. ^[4]; Savage, D. E. ^[4]; Lagally, M. G. ^[4]; Coppersmith, S. N. ^[4];

^[4]; Eriksson, Mark A. ^[4]; Vandersypen, Lieven M. K. ^[2];

^[1]

Purdue Univ., West Lafayette, IN (United States). Electrical and Computer Engineering and Network for Computational Nanotechnology
Delft Univ. of Technology (Netherlands). QuTech and Kavli Inst. of Nanoscience
Delft Univ. of Technology (Netherlands). QuTech and Kavli Inst. of Nanoscience; AGH - Univ. of Science and Technology, Krakow (Poland). Academic Centre for Materials and Nanotechnology
Univ. of Wisconsin, Madison, WI (United States)

Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. We report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs.

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Research Organization:: Univ. of Wisconsin, Madison, WI (United States). Materials Research Science and Engineering Center (MRSEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); National Science Foundation (NSF); European Research Council (ERC)

Contributing Organization:: Purdue Univ., West Lafayette, IN (United States). Network for Computational Nanotechnology (nanoHUB.org)

Grant/Contract Number:: FG02-03ER46028; W911NF-12-0607; DMR-1121288; EEC-0228390

OSTI ID:: 1460097

Journal Information:: npj Quantum Information, Vol. 4, Issue 1; ISSN 2056-6387

Publisher:: Nature Partner JournalsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 35 works

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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon Harvey-Collard, Patrick; Jacobson, N. Tobias; Bureau-Oxton, Chloé arXiv https://doi.org/10.48550/arxiv.1808.07378	text	January 2018
Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot Tariq, Bilal; Hu, Xuedong arXiv https://doi.org/10.48550/arxiv.1904.11944	text	January 2019
Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si$_x$Ge$_{1-x}$ quantum dot Hollmann, Arne; Struck, Tom; Langrock, Veit arXiv https://doi.org/10.48550/arxiv.1907.04146	text	January 2019
Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives Gonzalez-Zalba, M. F.; de Franceschi, S.; Charbon, E. arXiv https://doi.org/10.48550/arxiv.2011.11753	text	January 2020

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