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Title: Effect of oxidation state of manganese in manganese oxide thin films on their capacitance performances

Authors:
; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
FOREIGN
OSTI Identifier:
1459968
Resource Type:
Journal Article
Journal Name:
Surface Science
Additional Journal Information:
Journal Volume: 676; Journal Issue: C; Journal ID: ISSN 0039-6028
Publisher:
Elsevier
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Wang, Zhiqiang, Yang, Dongfang, and Sham, Tsun-Kong. Effect of oxidation state of manganese in manganese oxide thin films on their capacitance performances. United States: N. p., 2018. Web. doi:10.1016/j.susc.2017.12.011.
Wang, Zhiqiang, Yang, Dongfang, & Sham, Tsun-Kong. Effect of oxidation state of manganese in manganese oxide thin films on their capacitance performances. United States. doi:10.1016/j.susc.2017.12.011.
Wang, Zhiqiang, Yang, Dongfang, and Sham, Tsun-Kong. Mon . "Effect of oxidation state of manganese in manganese oxide thin films on their capacitance performances". United States. doi:10.1016/j.susc.2017.12.011.
@article{osti_1459968,
title = {Effect of oxidation state of manganese in manganese oxide thin films on their capacitance performances},
author = {Wang, Zhiqiang and Yang, Dongfang and Sham, Tsun-Kong},
abstractNote = {},
doi = {10.1016/j.susc.2017.12.011},
journal = {Surface Science},
issn = {0039-6028},
number = C,
volume = 676,
place = {United States},
year = {2018},
month = {10}
}