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Title: Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch

Abstract

broadband travelling wave kicker operating with 80 MHz repetition rates is required for the new PIP-II accelerator at Fermilab. We present a technique to drive simultaneously four series-connected enhancement mode GaN-on-silicon power transistors by means of microwave photonics techniques. These four transistors are arranged into a high voltage and high repetition rate switch. Using multiple transistors in series is required to share switching losses. Using a photonic signal distribution system is required to achieve precise synchronization between transistors. We demonstrate 600 V arbitrary pulse generation into a 200 Ohm load with 2 ns rise/fall time. The arbitrary pulse widths can be adjusted from 4 ns to essentially DC.

Authors:
 [1];  [1]
  1. Fermilab
Publication Date:
Research Org.:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
OSTI Identifier:
1459582
Report Number(s):
FERMILAB-CONF-18-218-AD
1680987
DOE Contract Number:
AC02-07CH11359
Resource Type:
Conference
Country of Publication:
United States
Language:
English

Citation Formats

Frolov, Daniil, and Saewert, Greg. Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch. United States: N. p., 2018. Web.
Frolov, Daniil, & Saewert, Greg. Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch. United States.
Frolov, Daniil, and Saewert, Greg. Tue . "Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch". United States. doi:. https://www.osti.gov/servlets/purl/1459582.
@article{osti_1459582,
title = {Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch},
author = {Frolov, Daniil and Saewert, Greg},
abstractNote = {broadband travelling wave kicker operating with 80 MHz repetition rates is required for the new PIP-II accelerator at Fermilab. We present a technique to drive simultaneously four series-connected enhancement mode GaN-on-silicon power transistors by means of microwave photonics techniques. These four transistors are arranged into a high voltage and high repetition rate switch. Using multiple transistors in series is required to share switching losses. Using a photonic signal distribution system is required to achieve precise synchronization between transistors. We demonstrate 600 V arbitrary pulse generation into a 200 Ohm load with 2 ns rise/fall time. The arbitrary pulse widths can be adjusted from 4 ns to essentially DC.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2018},
month = {Tue May 01 00:00:00 EDT 2018}
}

Conference:
Other availability
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