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Title: Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

Abstract

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Inventors:
; ;
Publication Date:
Research Org.:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1459574
Patent Number(s):
10,008,618
Application Number:
15/658,790
Assignee:
International Business Machines Corporation (Armonk, NY) DOEEE
DOE Contract Number:
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Jul 25
Country of Publication:
United States
Language:
English

Citation Formats

Haight, Richard A., Hannon, James B., and Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation. United States: N. p., 2018. Web.
Haight, Richard A., Hannon, James B., & Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation. United States.
Haight, Richard A., Hannon, James B., and Oida, Satoshi. Tue . "Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation". United States. doi:. https://www.osti.gov/servlets/purl/1459574.
@article{osti_1459574,
title = {Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation},
author = {Haight, Richard A. and Hannon, James B. and Oida, Satoshi},
abstractNote = {A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 26 00:00:00 EDT 2018},
month = {Tue Jun 26 00:00:00 EDT 2018}
}

Patent:

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