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Title: Connection topology of step edge state bands at the surface of a three dimensional topological insulator

Abstract

Topological insulators (TIs) in the Bi 2Se 3 family manifest helical Dirac surface states that span the topologically ordered bulk band gap. Recent scanning tunneling microscopy measurements have discovered additional states in the bulk band gap of Bi 2Se 3 and Bi 2Te 3, localized at one-dimensional step edges. Here numerical simulations of a TI surface are used to explore the phenomenology of edge state formation at the single-quintuple layer step defects found ubiquitously on these materials. The modeled one-dimensional edge states are found to exhibit a stable topological connection to the two-dimensional surface state Dirac point.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1459225
Alternate Identifier(s):
OSTI ID: 1484212
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article: Published Article
Journal Name:
New Journal of Physics
Additional Journal Information:
Journal Name: New Journal of Physics Journal Volume: 20 Journal Issue: 7; Journal ID: ISSN 1367-2630
Publisher:
IOP Publishing
Country of Publication:
United Kingdom
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats

Xu, Yishuai, Jiang, Guodong, Chiu, Janet, Miao, Lin, Kotta, Erica, Zhang, Yutan, Biswas, Rudro R., and Wray, L. Andrew. Connection topology of step edge state bands at the surface of a three dimensional topological insulator. United Kingdom: N. p., 2018. Web. doi:10.1088/1367-2630/aacef6.
Xu, Yishuai, Jiang, Guodong, Chiu, Janet, Miao, Lin, Kotta, Erica, Zhang, Yutan, Biswas, Rudro R., & Wray, L. Andrew. Connection topology of step edge state bands at the surface of a three dimensional topological insulator. United Kingdom. https://doi.org/10.1088/1367-2630/aacef6
Xu, Yishuai, Jiang, Guodong, Chiu, Janet, Miao, Lin, Kotta, Erica, Zhang, Yutan, Biswas, Rudro R., and Wray, L. Andrew. Sun . "Connection topology of step edge state bands at the surface of a three dimensional topological insulator". United Kingdom. https://doi.org/10.1088/1367-2630/aacef6.
@article{osti_1459225,
title = {Connection topology of step edge state bands at the surface of a three dimensional topological insulator},
author = {Xu, Yishuai and Jiang, Guodong and Chiu, Janet and Miao, Lin and Kotta, Erica and Zhang, Yutan and Biswas, Rudro R. and Wray, L. Andrew},
abstractNote = {Topological insulators (TIs) in the Bi2Se3 family manifest helical Dirac surface states that span the topologically ordered bulk band gap. Recent scanning tunneling microscopy measurements have discovered additional states in the bulk band gap of Bi2Se3 and Bi2Te3, localized at one-dimensional step edges. Here numerical simulations of a TI surface are used to explore the phenomenology of edge state formation at the single-quintuple layer step defects found ubiquitously on these materials. The modeled one-dimensional edge states are found to exhibit a stable topological connection to the two-dimensional surface state Dirac point.},
doi = {10.1088/1367-2630/aacef6},
url = {https://www.osti.gov/biblio/1459225}, journal = {New Journal of Physics},
issn = {1367-2630},
number = 7,
volume = 20,
place = {United Kingdom},
year = {2018},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at https://doi.org/10.1088/1367-2630/aacef6

Citation Metrics:
Cited by: 3 works
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Works referenced in this record:

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    Works referencing / citing this record:

    Experimental Observation of Bound States of 2D Dirac Electrons at Surface Steps of the Topological Insulator Bi 2 Se 3
    journal, January 2019