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Title: Chemical-free n-type and p-type multilayer-graphene transistors

Abstract

Here, a single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

Authors:
 [1];  [2]
  1. Voxtel Inc. and Univ. of Oregon, Eugene, OR (United States). Lokey Lab.
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Sustainable Energy Technologies Dept.; Stony Brook Univ., NY (United States). Dept. of Physics and Astronomy and Dept. of Electrical and Computer Engineering
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1459168
Alternate Identifier(s):
OSTI ID: 1283420
Report Number(s):
BNL-206802-2018-JAAM
Journal ID: ISSN 0003-6951; APPLAB
Grant/Contract Number:  
SC0012704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 5; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; doping; multilayers; amorphous metals; electron beam deposition; field effect transistors; graphene; sodium; electron doped superconductors; Dirac equation

Citation Formats

Dissanayake, D. M. N. M., and Eisaman, Matthew D. Chemical-free n-type and p-type multilayer-graphene transistors. United States: N. p., 2016. Web. doi:10.1063/1.4960530.
Dissanayake, D. M. N. M., & Eisaman, Matthew D. Chemical-free n-type and p-type multilayer-graphene transistors. United States. doi:10.1063/1.4960530.
Dissanayake, D. M. N. M., and Eisaman, Matthew D. Fri . "Chemical-free n-type and p-type multilayer-graphene transistors". United States. doi:10.1063/1.4960530. https://www.osti.gov/servlets/purl/1459168.
@article{osti_1459168,
title = {Chemical-free n-type and p-type multilayer-graphene transistors},
author = {Dissanayake, D. M. N. M. and Eisaman, Matthew D.},
abstractNote = {Here, a single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.},
doi = {10.1063/1.4960530},
journal = {Applied Physics Letters},
number = 5,
volume = 109,
place = {United States},
year = {Fri Aug 05 00:00:00 EDT 2016},
month = {Fri Aug 05 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
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