Chemical-free n-type and p-type multilayer-graphene transistors
- Voxtel Inc. and Univ. of Oregon, Eugene, OR (United States). Lokey Lab.
- Brookhaven National Lab. (BNL), Upton, NY (United States). Sustainable Energy Technologies Dept.; Stony Brook Univ., NY (United States). Dept. of Physics and Astronomy and Dept. of Electrical and Computer Engineering
Here, a single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Biological and Environmental Research (BER); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1459168
- Alternate ID(s):
- OSTI ID: 1283420
- Report Number(s):
- BNL-206802-2018-JAAM; APPLAB
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 5; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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