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Title: Electron spin-based information shuttling for a computer system

Abstract

A silicon metal-oxide semiconductor device transports a spin-polarized single electron. An array of silicon quantum dot electrodes is arranged atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The array comprises at least a first electrode and a second electrode adjacent to the first electrode. A transport control logic for individually controls a voltage applied to the electrodes. The transport control logic is configured to gradually decrease a voltage at the first electrode while gradually increasing a voltage at the second electrode. Localization of the single electron is adiabatically transferred from the first electrode to the second electrode while maintaining a desired energy gap between a ground state and a first excited state of the single electron.

Inventors:
;
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1459000
Patent Number(s):
10,002,328
Application Number:
15/381,819
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Dec 16
Country of Publication:
United States
Language:
English

Citation Formats

Gamble, IV, John King, and Carroll, Malcolm S. Electron spin-based information shuttling for a computer system. United States: N. p., 2018. Web.
Gamble, IV, John King, & Carroll, Malcolm S. Electron spin-based information shuttling for a computer system. United States.
Gamble, IV, John King, and Carroll, Malcolm S. Tue . "Electron spin-based information shuttling for a computer system". United States. doi:. https://www.osti.gov/servlets/purl/1459000.
@article{osti_1459000,
title = {Electron spin-based information shuttling for a computer system},
author = {Gamble, IV, John King and Carroll, Malcolm S.},
abstractNote = {A silicon metal-oxide semiconductor device transports a spin-polarized single electron. An array of silicon quantum dot electrodes is arranged atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The array comprises at least a first electrode and a second electrode adjacent to the first electrode. A transport control logic for individually controls a voltage applied to the electrodes. The transport control logic is configured to gradually decrease a voltage at the first electrode while gradually increasing a voltage at the second electrode. Localization of the single electron is adiabatically transferred from the first electrode to the second electrode while maintaining a desired energy gap between a ground state and a first excited state of the single electron.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 19 00:00:00 EDT 2018},
month = {Tue Jun 19 00:00:00 EDT 2018}
}

Patent:

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