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Title: Free electron-driven photophysics in n-type doped silicon nanocrystals

Abstract

By making use of multiple spectroscopic techniques we provide a comprehensive understanding of the photophysics of n-type doped Si nanocrystals.

Authors:
ORCiD logo [1]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1458906
Alternate Identifier(s):
OSTI ID: 1454634
Report Number(s):
NREL/JA-5900-71012
Journal ID: ISSN 2040-3364; NANOHL
Grant/Contract Number:  
AC36-08GO28308; AC36-08G028308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 10; Journal Issue: 25; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; silicon nanocrystals; phosphorus doping; coulomb interactions; ultrafast spectroscopy

Citation Formats

Limpens, R., and Neale, N. R.. Free electron-driven photophysics in n-type doped silicon nanocrystals. United States: N. p., 2018. Web. doi:10.1039/C8NR02173B.
Limpens, R., & Neale, N. R.. Free electron-driven photophysics in n-type doped silicon nanocrystals. United States. doi:10.1039/C8NR02173B.
Limpens, R., and Neale, N. R.. Tue . "Free electron-driven photophysics in n-type doped silicon nanocrystals". United States. doi:10.1039/C8NR02173B.
@article{osti_1458906,
title = {Free electron-driven photophysics in n-type doped silicon nanocrystals},
author = {Limpens, R. and Neale, N. R.},
abstractNote = {By making use of multiple spectroscopic techniques we provide a comprehensive understanding of the photophysics of n-type doped Si nanocrystals.},
doi = {10.1039/C8NR02173B},
journal = {Nanoscale},
number = 25,
volume = 10,
place = {United States},
year = {Tue Jun 12 00:00:00 EDT 2018},
month = {Tue Jun 12 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on June 12, 2019
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Works referenced in this record:

Universal Size-Dependent Trend in Auger Recombination in Direct-Gap and Indirect-Gap Semiconductor Nanocrystals
journal, May 2009


Single Molecule Detection Using Surface-Enhanced Raman Scattering (SERS)
journal, March 1997


Silyl Radical Abstraction in the Functionalization of Plasma-Synthesized Silicon Nanocrystals
journal, September 2015

  • Wheeler, Lance M.; Anderson, Nicholas C.; Palomaki, Peter K. B.
  • Chemistry of Materials, Vol. 27, Issue 19, p. 6869-6878
  • DOI: 10.1021/acs.chemmater.5b03309