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Free electron-driven photophysics in n-type doped silicon nanocrystals
Abstract
By making use of multiple spectroscopic techniques we provide a comprehensive understanding of the photophysics of n-type doped Si nanocrystals.
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
- OSTI Identifier:
- 1458906
- Alternate Identifier(s):
- OSTI ID: 1454634
- Report Number(s):
- NREL/JA-5900-71012
Journal ID: ISSN 2040-3364; NANOHL
- Grant/Contract Number:
- AC36-08GO28308; AC36-08G028308
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Nanoscale
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 25; Journal ID: ISSN 2040-3364
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; silicon nanocrystals; phosphorus doping; coulomb interactions; ultrafast spectroscopy
Citation Formats
Limpens, R., and Neale, N. R. Free electron-driven photophysics in n-type doped silicon nanocrystals. United States: N. p., 2018.
Web. doi:10.1039/C8NR02173B.
Limpens, R., & Neale, N. R. Free electron-driven photophysics in n-type doped silicon nanocrystals. United States. https://doi.org/10.1039/C8NR02173B
Limpens, R., and Neale, N. R. 2018.
"Free electron-driven photophysics in n-type doped silicon nanocrystals". United States. https://doi.org/10.1039/C8NR02173B. https://www.osti.gov/servlets/purl/1458906.
@article{osti_1458906,
title = {Free electron-driven photophysics in n-type doped silicon nanocrystals},
author = {Limpens, R. and Neale, N. R.},
abstractNote = {By making use of multiple spectroscopic techniques we provide a comprehensive understanding of the photophysics of n-type doped Si nanocrystals.},
doi = {10.1039/C8NR02173B},
url = {https://www.osti.gov/biblio/1458906},
journal = {Nanoscale},
issn = {2040-3364},
number = 25,
volume = 10,
place = {United States},
year = {Tue Jun 12 00:00:00 EDT 2018},
month = {Tue Jun 12 00:00:00 EDT 2018}
}
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Cited by: 10 works
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Figures / Tables:
Fig. 1: Structural characterization of un-oxidized (a–c) and oxidized (d–e) P:Si–H. (a) FTIR spectra of all three P-concentrations. Log-normal fits of the LSPR modes are represented by the black dashed lines. (b) Main panel: XRD patterns of all three P-concentrations. The dashed line is a Voight fit. Inset: NC diametermore »
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