High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
- Research Organization:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- B601996
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Number(s):
- 10,002,919
- Application Number:
- 15/698,186
- OSTI ID:
- 1458764
- Resource Relation:
- Patent File Date: 2017 Sep 07
- Country of Publication:
- United States
- Language:
- English
High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
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patent | March 2017 |
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High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors