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Title: High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors

Abstract

An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Inventors:
; ; ; ; ;
Publication Date:
Research Org.:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1458764
Patent Number(s):
10,002,919
Application Number:
15/698,186
Assignee:
International Business Machines Corporation (Armonk, NY) OSTI
DOE Contract Number:
B601996
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Sep 07
Country of Publication:
United States
Language:
English

Citation Formats

Deligianni, Hariklia, Gallagher, William J., Mason, Maurice, O'Sullivan, Eugene J., Romankiw, Lubomyr T., and Wang, Naigang. High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors. United States: N. p., 2018. Web.
Deligianni, Hariklia, Gallagher, William J., Mason, Maurice, O'Sullivan, Eugene J., Romankiw, Lubomyr T., & Wang, Naigang. High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors. United States.
Deligianni, Hariklia, Gallagher, William J., Mason, Maurice, O'Sullivan, Eugene J., Romankiw, Lubomyr T., and Wang, Naigang. Tue . "High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors". United States. doi:. https://www.osti.gov/servlets/purl/1458764.
@article{osti_1458764,
title = {High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors},
author = {Deligianni, Hariklia and Gallagher, William J. and Mason, Maurice and O'Sullivan, Eugene J. and Romankiw, Lubomyr T. and Wang, Naigang},
abstractNote = {An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 19 00:00:00 EDT 2018},
month = {Tue Jun 19 00:00:00 EDT 2018}
}

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