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Title: Lifetime laser damage performance of β-Ga 2O 3 for high power applications

Abstract

Gallium oxide (Ga 2O 3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, by using systematic laser damage performance tests, we establish that β-Ga 2O 3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga 2O 3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga 2O 3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga 2O 3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

Authors:
 [1];  [2];  [1];  [3]; ORCiD logo [4]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). National Ignition Facility (NIF), Physical and Life Sciences and Photon Sciences
  2. The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering; Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Electrical Engineering and Computer Science
  3. The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering and Dept. of Materials Science and Engineering; Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Electrical Engineering and Computer Science
  4. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). National Ignition Facility (NIF), Materials Engineering Division and Photon Sciences
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF)
OSTI Identifier:
1458626
Alternate Identifier(s):
OSTI ID: 1427319
Report Number(s):
LLNL-JRNL-741078
Journal ID: ISSN 2166-532X; 894761
Grant/Contract Number:
AC52-07NA27344; DMR-1755479; 15-ERD-057
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 6; Journal Issue: 3; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; 36 MATERIALS SCIENCE; power electronics; laser applications; semiconductors; photoluminescence; thin films; epitaxy; chemical compounds; raman spectroscopy

Citation Formats

Yoo, Jae-Hyuck, Rafique, Subrina, Lange, Andrew, Zhao, Hongping, and Elhadj, Selim. Lifetime laser damage performance of β-Ga2O3 for high power applications. United States: N. p., 2018. Web. doi:10.1063/1.5021603.
Yoo, Jae-Hyuck, Rafique, Subrina, Lange, Andrew, Zhao, Hongping, & Elhadj, Selim. Lifetime laser damage performance of β-Ga2O3 for high power applications. United States. doi:10.1063/1.5021603.
Yoo, Jae-Hyuck, Rafique, Subrina, Lange, Andrew, Zhao, Hongping, and Elhadj, Selim. Tue . "Lifetime laser damage performance of β-Ga2O3 for high power applications". United States. doi:10.1063/1.5021603. https://www.osti.gov/servlets/purl/1458626.
@article{osti_1458626,
title = {Lifetime laser damage performance of β-Ga2O3 for high power applications},
author = {Yoo, Jae-Hyuck and Rafique, Subrina and Lange, Andrew and Zhao, Hongping and Elhadj, Selim},
abstractNote = {Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, by using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.},
doi = {10.1063/1.5021603},
journal = {APL Materials},
number = 3,
volume = 6,
place = {United States},
year = {Tue Mar 20 00:00:00 EDT 2018},
month = {Tue Mar 20 00:00:00 EDT 2018}
}

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