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Title: Tin selenide single crystals for thermoelectric applications

Patent ·
OSTI ID:1458528

Thermoelectric materials and thermoelectric cells and devices incorporating the thermoelectric materials are provided. Also provided are methods of using the cells and devices to generate electricity and to power external electronic devices. The thermoelectric materials comprise SnSe single crystals, including hole doped SnSe single crystals.

Research Organization:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
SC0001054
Assignee:
Northwestern University (Evanston, IL)
Patent Number(s):
10,002,998
Application Number:
14/823,738
OSTI ID:
1458528
Resource Relation:
Patent File Date: 2015 Aug 11
Country of Publication:
United States
Language:
English

References (15)

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Thermoelectrics Compositions Comprising Nanoscale Inclusions in a Chalcogenide Matrix patent-application March 2011
High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites patent-application June 2012
SnSe Nanocrystals: Synthesis, Structure, Optical Properties, and Surface Chemistry
  • Baumgardner, William J.; Choi, Joshua J.; Lim, Yee-Fun
  • Journal of the American Chemical Society, Vol. 132, Issue 28, p. 9519-9521 https://doi.org/10.1021/ja1013745
journal July 2010
Neutron diffraction study of the structural phase transition in SnS and SnSe journal January 1986
Thermoelectric properties of p-type polycrystalline SnSe doped with Ag journal January 2014
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Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals journal April 2014
High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds journal June 2015
Simple evaluation of the maximum thermoelectric figure of merit, with application to mixed crystals SnS1-xSex journal May 1963
Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe journal November 2015

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