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Title: Nonequilibrium Phase Precursors during a Photoexcited Insulator-to-Metal Transition in V 2 O 3

Journal Article · · Physical Review Letters
 [1];  [2];  [1];  [1];  [1];  [3];  [1];  [1];  [4];  [4];  [4];  [5];  [1];  [1]
  1. Univ. of California, San Diego, CA (United States). Dept. of Physics and Center for Advanced Nanoscience
  2. Univ. de los Andes, Bogota (Columbia). Dept. of Physics
  3. Univ. of California, San Diego, CA (United States). Dept. of Physics and Center for Advanced Nanoscience; Univ. of California, San Diego, CA (United States). Center for Memory and Recording Research
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials

Here, we photoinduce and directly observe with x-ray scattering an ultrafast enhancement of the structural long-range order in the archetypal Mott system V2O3. Despite the ultrafast increase in crystal symmetry, the change of unit cell volume occurs an order of magnitude slower and coincides with the insulator-to-metal transition. The decoupling between the two structural responses in the time domain highlights the existence of a transient photoinduced precursor phase, which is distinct from the two structural phases present in equilibrium. X-ray nanoscopy reveals that acoustic phonons trapped in nanoscale twin domains govern the dynamics of the ultrafast transition into the precursor phase, while nucleation and growth of metallic domains dictate the duration of the slower transition into the metallic phase. The enhancement of the long-range order before completion of the electronic transition demonstrates the critical role the nonequilibrium structural phases play during electronic phase transitions in correlated electrons systems.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR)
Grant/Contract Number:
FA9550-16-1-0026; MRPI MR-15-328-528; SC0001805; FG02-87ER45332; AC02-76SF00515; AC02-06CH11357; 120471250659; 120424054303
OSTI ID:
1458468
Alternate ID(s):
OSTI ID: 1437073; OSTI ID: 1461498
Journal Information:
Physical Review Letters, Vol. 120, Issue 20; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 34 works
Citation information provided by
Web of Science

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Cited By (5)

Strain Induced Orbital Dynamics Across the Metal Insulator Transition in Thin VO2/TiO2 (001) Films journal January 2020
Overcoming the thermal regime for the electric-field driven Mott transition in vanadium sesquioxide journal March 2019
Organismic materials for beyond von Neumann machines journal March 2020
Fermi-Bose Mixtures and BCS-BEC Crossover in High-Tc Superconductors journal June 2019
Strain induced orbital dynamics across the Metal Insulator transition in thin VO2/TiO2(001) films text January 2020

Figures / Tables (3)