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Title: Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide

Abstract

Introduction of an ultrathin (2 nm) film of cobalt oxide (CoO x) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiO x coating yields stable photoelectrodes with photocurrent-onset potentials of ~-240 mV relative to the equilibrium potential for O 2(g) evolution and current densities of ~28 mA cm -2 at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np + buried homojunctions.

Authors:
 [1];  [2];  [3];  [4];  [3];  [5];  [1];  [1]; ORCiD logo [6];  [1];  [3];  [7];  [8]
  1. California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP) and Department of Applied Physics & Materials Science
  2. California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP)
  3. California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP) and Division of Chemistry and Chemical Engineering
  4. California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP); Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie (Germany)
  5. Joint Center for Artificial Photosynthesis; California Institute of Technology; Pasadena; USA; Division of Chemistry and Chemical Engineering
  6. California Inst. of Technology (CalTech), Pasadena, CA (United States). Division of Chemistry and Chemical Engineering
  7. California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP) and Beckman Institute and Molecular Materials Research Center
  8. California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP), Division of Chemistry and Chemical Engineering, Beckman Institute and Molecular Materials Research Center and Kavli Nanoscience Institute
Publication Date:
Research Org.:
California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1457528
Grant/Contract Number:  
SC0004993
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Energy & Environmental Science
Additional Journal Information:
Journal Volume: 8; Journal Issue: 9; Journal ID: ISSN 1754-5692
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Zhou, Xinghao, Liu, Rui, Sun, Ke, Friedrich, Dennis, McDowell, Matthew T., Yang, Fan, Omelchenko, Stefan T., Saadi, Fadl H., Nielander, Adam C., Yalamanchili, Sisir, Papadantonakis, Kimberly M., Brunschwig, Bruce S., and Lewis, Nathan S. Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide. United States: N. p., 2015. Web. doi:10.1039/c5ee01687h.
Zhou, Xinghao, Liu, Rui, Sun, Ke, Friedrich, Dennis, McDowell, Matthew T., Yang, Fan, Omelchenko, Stefan T., Saadi, Fadl H., Nielander, Adam C., Yalamanchili, Sisir, Papadantonakis, Kimberly M., Brunschwig, Bruce S., & Lewis, Nathan S. Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide. United States. doi:10.1039/c5ee01687h.
Zhou, Xinghao, Liu, Rui, Sun, Ke, Friedrich, Dennis, McDowell, Matthew T., Yang, Fan, Omelchenko, Stefan T., Saadi, Fadl H., Nielander, Adam C., Yalamanchili, Sisir, Papadantonakis, Kimberly M., Brunschwig, Bruce S., and Lewis, Nathan S. Wed . "Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide". United States. doi:10.1039/c5ee01687h. https://www.osti.gov/servlets/purl/1457528.
@article{osti_1457528,
title = {Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide},
author = {Zhou, Xinghao and Liu, Rui and Sun, Ke and Friedrich, Dennis and McDowell, Matthew T. and Yang, Fan and Omelchenko, Stefan T. and Saadi, Fadl H. and Nielander, Adam C. and Yalamanchili, Sisir and Papadantonakis, Kimberly M. and Brunschwig, Bruce S. and Lewis, Nathan S.},
abstractNote = {Introduction of an ultrathin (2 nm) film of cobalt oxide (CoOx) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiOx coating yields stable photoelectrodes with photocurrent-onset potentials of ~-240 mV relative to the equilibrium potential for O2(g) evolution and current densities of ~28 mA cm-2 at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np+ buried homojunctions.},
doi = {10.1039/c5ee01687h},
journal = {Energy & Environmental Science},
number = 9,
volume = 8,
place = {United States},
year = {Wed Jul 15 00:00:00 EDT 2015},
month = {Wed Jul 15 00:00:00 EDT 2015}
}

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