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Title: GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates: Preprint

Abstract

Decreasing the cost of single-crystal substrates by wafer reuse techniques has long been sought for III-V solar cells. Controlled spalling of III-V devices is a possible pathway for epitaxial liftoff, which would help reduce costs, but chemo- mechanical polishing after liftoff tends to limit the potential cost savings. Growth on an unpolished spalled surface would be an additional step toward lower costs, but it is crucial to show high efficiency solar cell devices on these unprocessed substrates. In this study, we spalled 2-inch Ge wafers using a Ni stressor layer, and then grew GaAs solar cells by HVPE on the spalled Ge surface without any other surface treatment. We show a 12.8% efficient single-junction device, without anti-reflection coating, with quantum efficiency very close to identical devices grown by HVPE on non-spalled GaAs substrates. Demonstrating a high carrier collection on unpolished spalled wafers is a step toward reducing substrate-related liftoff and reuse costs.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [1];  [2]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. Colorado School of Mines
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1457222
Report Number(s):
NREL/CP-5900-71591
DOE Contract Number:
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2018 World Conference on Photovoltaic Energy Conversion (WCPEC-7), 10-15 June 2018, Waikoloa, Hawaii
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; photovotaics; gallium arsenide; solar cells; germanium substrate; controlled spalling; epitaxial lift-off

Citation Formats

Cavalli, Alessandro, Johnston, Steven, Sulas, Dana, Simon, John D, Schulte, Kevin L, Packard, Corinne, Young, David L, Ptak, Aaron J, and Ley, Brett. GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates: Preprint. United States: N. p., 2018. Web.
Cavalli, Alessandro, Johnston, Steven, Sulas, Dana, Simon, John D, Schulte, Kevin L, Packard, Corinne, Young, David L, Ptak, Aaron J, & Ley, Brett. GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates: Preprint. United States.
Cavalli, Alessandro, Johnston, Steven, Sulas, Dana, Simon, John D, Schulte, Kevin L, Packard, Corinne, Young, David L, Ptak, Aaron J, and Ley, Brett. Sat . "GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates: Preprint". United States. doi:. https://www.osti.gov/servlets/purl/1457222.
@article{osti_1457222,
title = {GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates: Preprint},
author = {Cavalli, Alessandro and Johnston, Steven and Sulas, Dana and Simon, John D and Schulte, Kevin L and Packard, Corinne and Young, David L and Ptak, Aaron J and Ley, Brett},
abstractNote = {Decreasing the cost of single-crystal substrates by wafer reuse techniques has long been sought for III-V solar cells. Controlled spalling of III-V devices is a possible pathway for epitaxial liftoff, which would help reduce costs, but chemo- mechanical polishing after liftoff tends to limit the potential cost savings. Growth on an unpolished spalled surface would be an additional step toward lower costs, but it is crucial to show high efficiency solar cell devices on these unprocessed substrates. In this study, we spalled 2-inch Ge wafers using a Ni stressor layer, and then grew GaAs solar cells by HVPE on the spalled Ge surface without any other surface treatment. We show a 12.8% efficient single-junction device, without anti-reflection coating, with quantum efficiency very close to identical devices grown by HVPE on non-spalled GaAs substrates. Demonstrating a high carrier collection on unpolished spalled wafers is a step toward reducing substrate-related liftoff and reuse costs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jun 02 00:00:00 EDT 2018},
month = {Sat Jun 02 00:00:00 EDT 2018}
}

Conference:
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