Probing the Optical Properties and Strain-Tuning of Ultrathin Mo1–xWxTe2

Aslan, Ozgur Burak; Datye, Isha M.; Mleczko, Michal J.; Cheung, Karen Sze; Krylyuk, Sergiy; Bruma, Alina; Kalish, Irina; Davydov, Albert V.; Pop, Eric; Heinz, Tony F.

doi:10.1021/acs.nanolett.8b00049

Title: Probing the Optical Properties and Strain-Tuning of Ultrathin Mo_1–xW_xTe₂

Journal Article · Wed Mar 21 00:00:00 EDT 2018 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.8b00049· OSTI ID:1457055

^[1]; Datye, Isha M. ^[2]; Mleczko, Michal J. ^[2]; Cheung, Karen Sze ^[2]; Krylyuk, Sergiy ^[3]; Bruma, Alina ^[4];

^[4]; Davydov, Albert V. ^[4];

^[2];

^[1]

Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., Stanford, CA (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States); Theiss Research, La Jolla, CA (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)

Ultrathin transition metal dichalcogenides (TMDCs) have recently been extensively investigated to understand their electronic and optical properties. Here we study ultrathin Mo_0.91W_0.09Te₂, a semiconducting alloy of MoTe₂, using Raman, photoluminescence (PL), and optical absorption spectroscopy. Mo_0.91W_0.09Te₂ transitions from an indirect to a direct optical band gap in the limit of monolayer thickness, exhibiting an optical gap of 1.10 eV, very close to its MoTe₂ counterpart. We apply tensile strain, for the first time, to monolayer MoTe₂ and Mo_0.91W_0.09Te₂ to tune the band structure of these materials; we observe that their optical band gaps decrease by 70 meV at 2.3% uniaxial strain. The spectral widths of the PL peaks decrease with increasing strain, which we attribute to weaker exciton–phonon intervalley scattering. Furthermore, strained MoTe₂ and Mo_0.91W_0.09Te₂ extend the range of band gaps of TMDC monolayers further into the near-infrared, an important attribute for potential applications in optoelectronics.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515; W911NF-15-1-0570; 70NANB16H043; FA9550-14-1-0040; FA9550-14-1-0251; 1542883

OSTI ID:: 1457055

Journal Information:: Nano Letters, Vol. 18, Issue 4; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 42 works

Citation information provided by
Web of Science

References (64)

Two-dimensional atomic crystals Novoselov, K. S.; Jiang, D.; Schedin, F. Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453 https://doi.org/10.1073/pnas.0502848102	journal	July 2005
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets Chhowalla, Manish; Shin, Hyeon Suk; Eda, Goki Nature Chemistry, Vol. 5, Issue 4, p. 263-275 https://doi.org/10.1038/nchem.1589	journal	April 2013
Optical Properties and Band Gap of Single- and Few-Layer MoTe ₂ Crystals Ruppert, Claudia; Aslan, Ozgur Burak; Heinz, Tony F. Nano Letters, Vol. 14, Issue 11 https://doi.org/10.1021/nl502557g	journal	October 2014
Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe ₂ Lezama, Ignacio Gutiérrez; Arora, Ashish; Ubaldini, Alberto Nano Letters, Vol. 15, Issue 4 https://doi.org/10.1021/nl5045007	journal	March 2015
Direct versus indirect band gap emission and exciton-exciton annihilation in atomically thin molybdenum ditelluride $({MoTe}_{2})$ Froehlicher, Guillaume; Lorchat, Etienne; Berciaud, Stéphane Physical Review B, Vol. 94, Issue 8 https://doi.org/10.1103/PhysRevB.94.085429	journal	August 2016
Homogeneous linewidth broadening and exciton dephasing mechanism in $MoT e_{2}$ Koirala, Sandhaya; Mouri, Shinichiro; Miyauchi, Yuhei Physical Review B, Vol. 93, Issue 7 https://doi.org/10.1103/PhysRevB.93.075411	journal	February 2016
Robust Excitons and Trions in Monolayer MoTe ₂ Yang, Jiong; Lü, Tieyu; Myint, Ye Win ACS Nano, Vol. 9, Issue 6 https://doi.org/10.1021/acsnano.5b02665	journal	May 2015
Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating Li, Yao; Duerloo, Karel-Alexander N.; Wauson, Kerry Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms10671	journal	February 2016
Structural Phase Transitions by Design in Monolayer Alloys Duerloo, Karel-Alexander N.; Reed, Evan J. ACS Nano, Vol. 10, Issue 1 https://doi.org/10.1021/acsnano.5b04359	journal	December 2015
Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers Duerloo, Karel-Alexander N.; Li, Yao; Reed, Evan J. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5214	journal	July 2014
Very large strain gauges based on single layer MoSe ₂ and WSe ₂ for sensing applications Hosseini, Manouchehr; Elahi, Mohammad; Pourfath, Mahdi Applied Physics Letters, Vol. 107, Issue 25 https://doi.org/10.1063/1.4937438	journal	December 2015
Elucidating the Optical Properties of Novel Heterolayered Materials Based on MoTe ₂ –InN for Photovoltaic Applications Villegas, Cesar E. P.; Rocha, A. R. The Journal of Physical Chemistry C, Vol. 119, Issue 21 https://doi.org/10.1021/jp5122596	journal	May 2015
Dynamic Phase Engineering of Bendable Transition Metal Dichalcogenide Monolayers Berry, Joel; Zhou, Songsong; Han, Jian Nano Letters, Vol. 17, Issue 4 https://doi.org/10.1021/acs.nanolett.7b00165	journal	March 2017
Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe ₂ and W _x Mo _{1– x} Te ₂ Alloy Zhang, Chenxi; Kc, Santosh; Nie, Yifan ACS Nano, Vol. 10, Issue 8 https://doi.org/10.1021/acsnano.6b00148	journal	July 2016
Engineering the Structural and Electronic Phases of MoTe ₂ through W Substitution Rhodes, D.; Chenet, D. A.; Janicek, B. E. Nano Letters, Vol. 17, Issue 3 https://doi.org/10.1021/acs.nanolett.6b04814	journal	February 2017
Structural phase transition in monolayer MoTe2 driven by electrostatic doping Wang, Ying; Xiao, Jun; Zhu, Hanyu Nature, Vol. 550, Issue 7677 https://doi.org/10.1038/nature24043	journal	October 2017
Room Temperature Semiconductor–Metal Transition of MoTe ₂ Thin Films Engineered by Strain Song, Seunghyun; Keum, Dong Hoon; Cho, Suyeon Nano Letters, Vol. 16, Issue 1 https://doi.org/10.1021/acs.nanolett.5b03481	journal	December 2015
Composition and temperature-dependent phase transition in miscible Mo1−xWxTe2 single crystals Lv, Yang-Yang; Cao, Lin; Li, Xiao Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep44587	journal	March 2017
The structural phases and vibrational properties of Mo _1−x W _x Te ₂ alloys Oliver, Sean M.; Beams, Ryan; Krylyuk, Sergiy 2D Materials, Vol. 4, Issue 4 https://doi.org/10.1088/2053-1583/aa7a32	journal	August 2017
Double resonance Raman modes in monolayer and few-layer ${MoTe}_{2}$ Guo, Huaihong; Yang, Teng; Yamamoto, Mahito Physical Review B, Vol. 91, Issue 20 https://doi.org/10.1103/PhysRevB.91.205415	journal	May 2015
Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional WSe $_{2}$ Luo, Xin; Zhao, Yanyuan; Zhang, Jun Physical Review B, Vol. 88, Issue 19 https://doi.org/10.1103/PhysRevB.88.195313	journal	November 2013
Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe ₂ Yamamoto, Mahito; Wang, Sheng Tsung; Ni, Meiyan ACS Nano, Vol. 8, Issue 4 https://doi.org/10.1021/nn5007607	journal	March 2014
Interlayer resonant Raman modes in few-layer ${MoS}_{2}$ Scheuschner, Nils; Gillen, Roland; Staiger, Matthias Physical Review B, Vol. 91, Issue 23 https://doi.org/10.1103/PhysRevB.91.235409	journal	June 2015
Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer ${MoTe}_{2}$ Song, Q. J.; Tan, Q. H.; Zhang, X. Physical Review B, Vol. 93, Issue 11 https://doi.org/10.1103/PhysRevB.93.115409	journal	March 2016
Raman scattering of few-layers MoTe ₂ Grzeszczyk, M.; Gołasa, K.; Zinkiewicz, M. 2D Materials, Vol. 3, Issue 2 https://doi.org/10.1088/2053-1583/3/2/025010	journal	April 2016
Resonant quenching of Raman scattering due to out-of-plane A1g/A′1 modes in few-layer MoTe2 Gołasa, Katarzyna; Grzeszczyk, Magda; Molas, Maciej R. Nanophotonics, Vol. 6, Issue 6 https://doi.org/10.1515/nanoph-2016-0150	journal	January 2017
New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides Terrones, H.; Corro, E. Del; Feng, S. Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep04215	journal	February 2014
Substrate-free layer-number identification of two-dimensional materials: A case of Mo _0.5 W _0.5 S ₂ alloy Qiao, Xiao-Fen; Li, Xiao-Li; Zhang, Xin Applied Physics Letters, Vol. 106, Issue 22 https://doi.org/10.1063/1.4921911	journal	June 2015
Mo ₁₋ _x W _x S ₂ -based photodetector fabrication and photoconductive characteristics Su, Wei-Jhih; Weng, Wei-Qian; Wang, You-Li Japanese Journal of Applied Physics, Vol. 56, Issue 3 https://doi.org/10.7567/JJAP.56.032201	journal	February 2017
Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport Zhang, Mei; Wu, Juanxia; Zhu, Yiming ACS Nano, Vol. 8, Issue 7 https://doi.org/10.1021/nn5020566	journal	June 2014
Composition-dependent Raman modes of Mo _1−x W _x S ₂ monolayer alloys Chen, Yanfeng; Dumcenco, Dumitru O.; Zhu, Yiming Nanoscale, Vol. 6, Issue 5 https://doi.org/10.1039/C3NR05630A	journal	January 2014
Roles of Mass, Structure, and Bond Strength in the Phonon Properties and Lattice Anharmonicity of Single-Layer Mo and W Dichalcogenides Huang, Liang-Feng; Zeng, Zhi The Journal of Physical Chemistry C, Vol. 119, Issue 32 https://doi.org/10.1021/acs.jpcc.5b04669	journal	August 2015
Unified Description of the Optical Phonon Modes in N -Layer MoTe ₂ Froehlicher, Guillaume; Lorchat, Etienne; Fernique, François Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b02683	journal	September 2015
Resonance effects in the Raman scattering of monolayer and few-layer ${MoSe}_{2}$ Soubelet, P.; Bruchhausen, A. E.; Fainstein, A. Physical Review B, Vol. 93, Issue 15 https://doi.org/10.1103/PhysRevB.93.155407	journal	April 2016
Optical Spectrum of ${MoS}_{2}$ : Many-Body Effects and Diversity of Exciton States Qiu, Diana Y.; da Jornada, Felipe H.; Louie, Steven G. Physical Review Letters, Vol. 111, Issue 21 https://doi.org/10.1103/PhysRevLett.111.216805	journal	November 2013
Light-Matter Interactions in Two-Dimensional Transition Metal Dichalcogenides: Dominant Excitonic Transitions in Mono- and Few-Layer MoX$_2$ and Band Nesting Gillen, Roland; Maultzsch, Janina IEEE Journal of Selected Topics in Quantum Electronics, Vol. 23, Issue 1 https://doi.org/10.1109/JSTQE.2016.2604359	journal	January 2017
The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties Wilson, J. A.; Yoffe, A. D. Advances in Physics, Vol. 18, Issue 73 https://doi.org/10.1080/00018736900101307	journal	May 1969
Transmission spectra of some transition metal dichalcogenides. II. Group VIA: trigonal prismatic coordination Beal, A. R.; Knights, J. C.; Liang, W. Y. Journal of Physics C: Solid State Physics, Vol. 5, Issue 24 https://doi.org/10.1088/0022-3719/5/24/016	journal	December 1972
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 Zhang, Yi; Chang, Tay-Rong; Zhou, Bo Nature Nanotechnology, Vol. 9, Issue 2 https://doi.org/10.1038/nnano.2013.277	journal	December 2013
Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- $M X_{2}$ semiconductors ( $M$ $=$ Mo, W; $X$ $=$ S, Se, Te) Yun, Won Seok; Han, S. W.; Hong, Soon Cheol Physical Review B, Vol. 85, Issue 3 https://doi.org/10.1103/PhysRevB.85.033305	journal	January 2012
Direct Measurement of the Thickness-Dependent Electronic Band Structure of ${MoS}_{2}$ Using Angle-Resolved Photoemission Spectroscopy Jin, Wencan; Yeh, Po-Chun; Zaki, Nader Physical Review Letters, Vol. 111, Issue 10 https://doi.org/10.1103/PhysRevLett.111.106801	journal	September 2013
The band structures of some transition metal dichalcogenides. III. Group VIA: trigonal prism materials Bromley, R. A.; Murray, R. B.; Yoffe, A. D. Journal of Physics C: Solid State Physics, Vol. 5, Issue 7 https://doi.org/10.1088/0022-3719/5/7/007	journal	April 1972
Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides Carvalho, A.; Ribeiro, R. M.; Castro Neto, A. H. Physical Review B, Vol. 88, Issue 11 https://doi.org/10.1103/PhysRevB.88.115205	journal	September 2013
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Evolution of Electronic Structure in Atomically Thin Sheets of WS ₂ and WSe ₂ Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang ACS Nano, Vol. 7, Issue 1 https://doi.org/10.1021/nn305275h	journal	December 2012
Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides Liu, Gui-Bin; Shan, Wen-Yu; Yao, Yugui Physical Review B, Vol. 88, Issue 8 https://doi.org/10.1103/PhysRevB.88.085433	journal	August 2013
Electronic band gaps and exciton binding energies in monolayer $M o_{x} W_{1 − x} S_{2}$ transition metal dichalcogenide alloys probed by scanning tunneling and optical spectroscopy Rigosi, Albert F.; Hill, Heather M.; Rim, Kwang Taeg Physical Review B, Vol. 94, Issue 7 https://doi.org/10.1103/PhysRevB.94.075440	journal	August 2016
Tightly bound trions in monolayer MoS2 Mak, Kin Fai; He, Keliang; Lee, Changgu Nature Materials, Vol. 12, Issue 3 https://doi.org/10.1038/nmat3505	journal	December 2012
Electrical Tuning of Exciton Binding Energies in Monolayer ${WS}_{2}$ Chernikov, Alexey; van der Zande, Arend M.; Hill, Heather M. Physical Review Letters, Vol. 115, Issue 12 https://doi.org/10.1103/PhysRevLett.115.126802	journal	September 2015
Reversible uniaxial strain tuning in atomically thin WSe ₂ Schmidt, Robert; Niehues, Iris; Schneider, Robert 2D Materials, Vol. 3, Issue 2 https://doi.org/10.1088/2053-1583/3/2/021011	journal	June 2016
Excitonic properties of semiconducting monolayer and bilayer $MoT e_{2}$ Robert, C.; Picard, R.; Lagarde, D. Physical Review B, Vol. 94, Issue 15 https://doi.org/10.1103/PhysRevB.94.155425	journal	October 2016
Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides Jin, Zhenghe; Li, Xiaodong; Mullen, Jeffrey T. Physical Review B, Vol. 90, Issue 4 https://doi.org/10.1103/PhysRevB.90.045422	journal	July 2014
Character tables for two space groups Herring, Conyers Journal of the Franklin Institute, Vol. 233, Issue 6 https://doi.org/10.1016/S0016-0032(42)90462-9	journal	June 1942
Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te) Rhim, S. H.; Kim, Yong Soo; Freeman, A. J. Applied Physics Letters, Vol. 107, Issue 24 https://doi.org/10.1063/1.4938120	journal	December 2015
Orbital analysis of electronic structure and phonon dispersion in MoS $_{2}$ , MoSe $_{2}$ , WS $_{2}$ , and WSe $_{2}$ monolayers under strain Chang, Chung-Huai; Fan, Xiaofeng; Lin, Shi-Hsin Physical Review B, Vol. 88, Issue 19 https://doi.org/10.1103/PhysRevB.88.195420	journal	November 2013
Quasiparticle band structures and optical properties of strained monolayer MoS $_{2}$ and WS $_{2}$ Shi, Hongliang; Pan, Hui; Zhang, Yong-Wei Physical Review B, Vol. 87, Issue 15 https://doi.org/10.1103/PhysRevB.87.155304	journal	April 2013
k · p theory for two-dimensional transition metal dichalcogenide semiconductors Kormányos, Andor; Burkard, Guido; Gmitra, Martin 2D Materials, Vol. 2, Issue 2 https://doi.org/10.1088/2053-1583/2/2/022001	journal	April 2015
Effects of in-plane stiffness and charge transfer on thermal expansion of monolayer transition metal dichalcogenide Wang, Zhan-Yu; Zhou, Yan-Li; Wang, Xue-Qing Chinese Physics B, Vol. 24, Issue 2 https://doi.org/10.1088/1674-1056/24/2/026501	journal	February 2015
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides Selig, Malte; Berghäuser, Gunnar; Raja, Archana Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms13279	journal	November 2016
Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe ₂ Zhang, Chendong; Chen, Yuxuan; Johnson, Amber Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b01968	journal	September 2015
Effect of doping and strain modulations on electron transport in monolayer ${MoS}_{2}$ Ge, Yanfeng; Wan, Wenhui; Feng, Wanxiang Physical Review B, Vol. 90, Issue 3 https://doi.org/10.1103/PhysRevB.90.035414	journal	July 2014
Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors Takagi, Shin‐ichi; Hoyt, Judy L.; Welser, Jeffrey J. Journal of Applied Physics, Vol. 80, Issue 3 https://doi.org/10.1063/1.362953	journal	August 1996
Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys Fischetti, M. V.; Laux, S. E. Journal of Applied Physics, Vol. 80, Issue 4, p. 2234-2252 https://doi.org/10.1063/1.363052	journal	August 1996
Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe ₂ Observed by Resonant Raman Spectroscopy del Corro, Elena; Terrones, Humberto; Elias, Ana ACS Nano, Vol. 8, Issue 9 https://doi.org/10.1021/nn504088g	journal	August 2014

Cited By (8)

Controlling neutral and charged excitons in MoS ₂ with defects Burns, Kory; Tan, Anne Marie Z.; Gabriel, Adam Journal of Materials Research, Vol. 35, Issue 8 https://doi.org/10.1557/jmr.2019.404	journal	January 2020
Wavelength‐Tunable Micro/Nanolasers Zhuge, Ming‐Hua; Pan, Caofeng; Zheng, Yazhi Advanced Optical Materials, Vol. 7, Issue 17 https://doi.org/10.1002/adom.201900275	journal	June 2019
Dielectric disorder in two-dimensional materials Raja, Archana; Waldecker, Lutz; Zipfel, Jonas Nature Nanotechnology, Vol. 14, Issue 9 https://doi.org/10.1038/s41565-019-0520-0	journal	August 2019
Strain dependence of photoluminescence and circular dichroism in transition metal dichalcogenides: a k · p analysis Aas, Shahnaz; Bulutay, Ceyhun Optics Express, Vol. 26, Issue 22 https://doi.org/10.1364/oe.26.028672	journal	January 2018
Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation Lin, Zhong; Lei, Yu; Subramanian, Shruti APL Materials, Vol. 6, Issue 8 https://doi.org/10.1063/1.5042598	journal	August 2018
Misfit Strain-Induced Buckling for Transition-Metal Dichalcogenide Lateral Heterostructures: A Molecular Dynamics Study Jiang, Jin-Wu Acta Mechanica Solida Sinica, Vol. 32, Issue 1 https://doi.org/10.1007/s10338-018-0049-z	journal	August 2018
Strain engineering in functional 2-dimensional materials Sun, Yufei; Liu, Kai Journal of Applied Physics, Vol. 125, Issue 8 https://doi.org/10.1063/1.5053795	journal	February 2019
Strain-tunable orbital, spin-orbit, and optical properties of monolayer transition-metal dichalcogenides Zollner, Klaus; Faria Junior, Paulo E.; Fabian, Jaroslav Universität Regensburg https://doi.org/10.5283/epub.41297	text	January 2019

Similar Records

Stacking Independence and Resonant Interlayer Excitation of Monolayer WSe₂/MoSe₂ Heterostructures for Photocatalytic Energy Conversion

Journal Article · Fri Jan 24 00:00:00 EST 2020 · ACS Applied Nano Materials · OSTI ID:1457055

Chen, Jihan; Bailey, Connor S.; Cui, Dingzhou; +7 more

Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe₂ Transistors

Journal Article · Wed Jan 02 00:00:00 EST 2019 · Nano Letters · OSTI ID:1457055

Barré, Elyse; Incorvia, Jean Anne C.; Kim, Suk Hyun; +4 more

Application-driven synthesis and characterization of hexagonal boron nitride deposited on metals and carbon nanotubes

Journal Article · Tue Sep 14 00:00:00 EDT 2021 · 2D Materials · OSTI ID:1457055

Chen, Victoria; Shin, Yong Cheol; Mikheev, Evgeny; +8 more

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
alloyed 2D materials
band gap
MoTe2
MoWTe2
photoluminescence
strain engineering

Title: Probing the Optical Properties and Strain-Tuning of Ultrathin Mo1–xWxTe2

Citation Formats

References (64)

Cited By (8)

Similar Records

Related Subjects

Title: Probing the Optical Properties and Strain-Tuning of Ultrathin Mo_1–xW_xTe₂