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Title: Apparent Fracture Toughness of Pressureless Sintered Silver Interconnects

Abstract

This study uses three-point flexural testing to estimate the room-temperature apparent fracture toughness ( K Ic_app) of a pressureless sintered-silver interconnect - a candidate material for use in power electronic devices. The K Ic_app estimation occurs via work-of-fracture measurement of a chevron-shaped sintered-silver joint centrally located in an “interconnect bend test specimen”. The chevron-shape was stencil-printed on a silver (Ag)-plated direct bonded copper (DBC) substrate, mated to an Ag-plated DBC substrate, and then sintered. The chevron-shape, used for decades in fracture mechanics examinations and in standardized tests of monolithic materials, enables controlled stable crack initiation and propagation that are prerequisites for valid K Ic_app estimation. The employed combination of an interconnect bend test specimen and bend test method is robust and simple, enables a means for interpreting the resistance to crack growth and delamination in an interconnect, provides a dependable way to judge the efficacies of sintered-silver processing conditions, and ultimately supports process optimization of sintered-silver interconnects.

Authors:
 [1];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1456805
Report Number(s):
ORNL/TM-2018/1
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English

Citation Formats

Wereszczak, Andrew A., Modugno, Max C., Chen, Branndon R., and Oistad, Brian A.. Apparent Fracture Toughness of Pressureless Sintered Silver Interconnects. United States: N. p., 2018. Web. doi:10.2172/1456805.
Wereszczak, Andrew A., Modugno, Max C., Chen, Branndon R., & Oistad, Brian A.. Apparent Fracture Toughness of Pressureless Sintered Silver Interconnects. United States. doi:10.2172/1456805.
Wereszczak, Andrew A., Modugno, Max C., Chen, Branndon R., and Oistad, Brian A.. Fri . "Apparent Fracture Toughness of Pressureless Sintered Silver Interconnects". United States. doi:10.2172/1456805. https://www.osti.gov/servlets/purl/1456805.
@article{osti_1456805,
title = {Apparent Fracture Toughness of Pressureless Sintered Silver Interconnects},
author = {Wereszczak, Andrew A. and Modugno, Max C. and Chen, Branndon R. and Oistad, Brian A.},
abstractNote = {This study uses three-point flexural testing to estimate the room-temperature apparent fracture toughness (K Ic_app) of a pressureless sintered-silver interconnect - a candidate material for use in power electronic devices. The K Ic_app estimation occurs via work-of-fracture measurement of a chevron-shaped sintered-silver joint centrally located in an “interconnect bend test specimen”. The chevron-shape was stencil-printed on a silver (Ag)-plated direct bonded copper (DBC) substrate, mated to an Ag-plated DBC substrate, and then sintered. The chevron-shape, used for decades in fracture mechanics examinations and in standardized tests of monolithic materials, enables controlled stable crack initiation and propagation that are prerequisites for valid K Ic_app estimation. The employed combination of an interconnect bend test specimen and bend test method is robust and simple, enables a means for interpreting the resistance to crack growth and delamination in an interconnect, provides a dependable way to judge the efficacies of sintered-silver processing conditions, and ultimately supports process optimization of sintered-silver interconnects.},
doi = {10.2172/1456805},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jun 01 00:00:00 EDT 2018},
month = {Fri Jun 01 00:00:00 EDT 2018}
}

Technical Report:

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