Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

Zhou, Wu; Zhang, Yu -Yang; Chen, Jianyi; Li, Dongdong; Zhou, Jiadong; Liu, Zheng; Chisholm, Matthew F.; Pantelides, Sokrates T.; Loh, Kian Ping

doi:10.1126/sciadv.aap9096

Title: Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

Journal Article · Fri Mar 23 00:00:00 EDT 2018 · Science Advances

DOI:https://doi.org/10.1126/sciadv.aap9096· OSTI ID:1456787

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^[2]; Chen, Jianyi ^[3]; Li, Dongdong ^[4];

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Univ. of Chinese Academy of Science, Beijing (China); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Chinese Academy of Science, Beijing (China); Vanderbilt Univ., Nashville, TN (United States)
National Univ. of Singapore (Singapore)
Univ. of Chinese Academy of Science, Beijing (China)
Nanyang Technological Univ. (Singapore)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

The advent of two-dimensional (2D) materials has led to extensive studies of heterostructures for novel applications. 2D lateral multiheterojunctions and superlattices have been recently demonstrated, but the available growth methods can only produce features with widths in the micrometer or, at best, 100-nm scale and usually result in rough and defective interfaces with extensive chemical intermixing. Widths smaller than 5 nm, which are needed for quantum confinement effects and quantum-well applications, have not been achieved. We demonstrate the growth of sub–2-nm quantum-well arrays in semiconductor monolayers, driven by the climb of misfit dislocations in a lattice-mismatched sulfide/selenide heterointerface. Density functional theory calculations provide an atom-by-atom description of the growth mechanism. The calculated energy bands reveal type II alignment suitable for quantum wells, suggesting that the structure could, in principle, be turned into a “conduit” of conductive nanoribbons for interconnects in future 2D integrated circuits via n-type modulation doping. This misfit dislocation–driven growth can be applied to different combinations of 2D monolayers with lattice mismatch, paving the way to a wide range of 2D quantum-well superlattices with controllable band alignment and nanoscale width.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; FG02-09ER46554

OSTI ID:: 1456787

Alternate ID(s):: OSTI ID: 1597882

Journal Information:: Science Advances, Vol. 4, Issue 3; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 27 works

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