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Title: Ultra-Wide-Bandgap Power Electronic Devices Based on Aluminum Gallium Nitride.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1456495
Report Number(s):
SAND2017-3592C
652281
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Government Microcircuit Applications and Critical Technology Conference held March 20-23, 2017 in reno, NV, United Stated.
Country of Publication:
United States
Language:
English

Citation Formats

Kaplar, Robert, Allerman, Andrew A., Armstrong, Andrew, Crawford, Mary H., Baca, Albert G., Flicker, Jack David, Pickrell, Gregory, Dickerson, Jeramy Ray, Klein, Brianna Alexandra, Douglas, Erica Ann, Miller, Mary A., Leonard, Francois Leonard, Talin, Albert Alec, Collins, Kimberlee Chiyoko, Reza, Shahed, King, Michael Patrick, Vizkelethy, Gyorgy, and Coltrin, Michael E. Ultra-Wide-Bandgap Power Electronic Devices Based on Aluminum Gallium Nitride.. United States: N. p., 2017. Web.
Kaplar, Robert, Allerman, Andrew A., Armstrong, Andrew, Crawford, Mary H., Baca, Albert G., Flicker, Jack David, Pickrell, Gregory, Dickerson, Jeramy Ray, Klein, Brianna Alexandra, Douglas, Erica Ann, Miller, Mary A., Leonard, Francois Leonard, Talin, Albert Alec, Collins, Kimberlee Chiyoko, Reza, Shahed, King, Michael Patrick, Vizkelethy, Gyorgy, & Coltrin, Michael E. Ultra-Wide-Bandgap Power Electronic Devices Based on Aluminum Gallium Nitride.. United States.
Kaplar, Robert, Allerman, Andrew A., Armstrong, Andrew, Crawford, Mary H., Baca, Albert G., Flicker, Jack David, Pickrell, Gregory, Dickerson, Jeramy Ray, Klein, Brianna Alexandra, Douglas, Erica Ann, Miller, Mary A., Leonard, Francois Leonard, Talin, Albert Alec, Collins, Kimberlee Chiyoko, Reza, Shahed, King, Michael Patrick, Vizkelethy, Gyorgy, and Coltrin, Michael E. 2017. "Ultra-Wide-Bandgap Power Electronic Devices Based on Aluminum Gallium Nitride.". United States. https://www.osti.gov/servlets/purl/1456495.
@article{osti_1456495,
title = {Ultra-Wide-Bandgap Power Electronic Devices Based on Aluminum Gallium Nitride.},
author = {Kaplar, Robert and Allerman, Andrew A. and Armstrong, Andrew and Crawford, Mary H. and Baca, Albert G. and Flicker, Jack David and Pickrell, Gregory and Dickerson, Jeramy Ray and Klein, Brianna Alexandra and Douglas, Erica Ann and Miller, Mary A. and Leonard, Francois Leonard and Talin, Albert Alec and Collins, Kimberlee Chiyoko and Reza, Shahed and King, Michael Patrick and Vizkelethy, Gyorgy and Coltrin, Michael E.},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1456495}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Apr 01 00:00:00 EDT 2017},
month = {Sat Apr 01 00:00:00 EDT 2017}
}

Conference:
Other availability
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