Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe2 films

Xu, Cai-Zhi; Wang, Xiaoxiong; Chen, Peng; Flötotto, David; Hlevyack, Joseph Andrew; Lin, Meng-Kai; Bian, Guang; Mo, Sung-Kwan; Chiang, Tai-Chang

doi:10.1103/PhysRevMaterials.2.064002

Title: Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe2 films

Journal Article · Wed Jun 20 00:00:00 EDT 2018 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.2.064002· OSTI ID:1571104

Xu, Cai-Zhi ^[1]; Wang, Xiaoxiong ^[2]; Chen, Peng ^[1]; Flötotto, David ^[3]; Hlevyack, Joseph Andrew ^[3]; Lin, Meng-Kai ^[3]; Bian, Guang ^[4]; Mo, Sung-Kwan ^[5]; Chiang, Tai-Chang ^[6]

Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics, and Frederick Seitz Materials Research Lab. (FS-MRL); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics, and Frederick Seitz Materials Research Lab. (FS-MRL); Nanjing Univ. of Science and Technology (China). College of Science
Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics, and Frederick Seitz Materials Research Lab. (FS-MRL)
Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics, and Frederick Seitz Materials Research Lab. (FS-MRL); National Taiwan Univ., Taipei, (Taiwan). Dept. of Physics

Layered quasi-two-dimensional transition-metal dichalcogenides (TMDCs), which can be readily made in ultrathin films, offer excellent opportunities for studying how dimensionality affects electronic structure and physical properties. Among all TMDCs, NbSe2 is of special interest; bulk NbSe2 hosts a charge-density-wave phase at low temperatures and has the highest known superconducting transition temperature, and these properties can be substantially modified in the ultrathin film limit. Motivated by these effects, we report herein a study of few-layer NbSe2 films, with a well-defined single-domain orientation, epitaxially grown on GaAs. Angle-resolved photoemission spectroscopy was used to determine the electronic band structure and the Fermi surface as a function of layer thickness; first-principles band-structure calculations were performed for comparison. The results show interesting changes as the film thickness increases from a monolayer (ML) to several layers. The most notable changes occur between a ML and a bilayer, where the inversion symmetry in bulk NbSe2 is preserved in the bilayer but not in the ML. Finally, the results illustrate some basic dimensional effects and provide a basis for further exploring and understanding the properties of NbSe2.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

Grant/Contract Number:: AC02-05CH11231; FG02-07ER46383

OSTI ID:: 1571104

Alternate ID(s):: OSTI ID: 1455094

Journal Information:: Physical Review Materials, Vol. 2, Issue 6; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 11 works

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