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Title: Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

Authors:
 [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1];  [1]
  1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1454896
Grant/Contract Number:
DEAR0000470
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 25; Related Information: CHORUS Timestamp: 2018-06-19 14:17:46; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Clinton, Evan A., Vadiee, Ehsan, Shen, Shyh-Chiang, Mehta, Karan, Yoder, P. Douglas, and Doolittle, W. Alan. Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts. United States: N. p., 2018. Web. doi:10.1063/1.5035293.
Clinton, Evan A., Vadiee, Ehsan, Shen, Shyh-Chiang, Mehta, Karan, Yoder, P. Douglas, & Doolittle, W. Alan. Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts. United States. doi:10.1063/1.5035293.
Clinton, Evan A., Vadiee, Ehsan, Shen, Shyh-Chiang, Mehta, Karan, Yoder, P. Douglas, and Doolittle, W. Alan. Mon . "Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts". United States. doi:10.1063/1.5035293.
@article{osti_1454896,
title = {Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts},
author = {Clinton, Evan A. and Vadiee, Ehsan and Shen, Shyh-Chiang and Mehta, Karan and Yoder, P. Douglas and Doolittle, W. Alan},
abstractNote = {},
doi = {10.1063/1.5035293},
journal = {Applied Physics Letters},
number = 25,
volume = 112,
place = {United States},
year = {Mon Jun 18 00:00:00 EDT 2018},
month = {Mon Jun 18 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on June 19, 2019
Publisher's Accepted Manuscript

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