Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

Clinton, Evan A.; Vadiee, Ehsan; Shen, Shyh-Chiang; Mehta, Karan; Yoder, P. Douglas; Doolittle, W. Alan

doi:10.1063/1.5035293

Title: Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

Journal Article · Tue Jun 19 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5035293· OSTI ID:1540218

Clinton, Evan A. ^[1];

^[1]; Shen, Shyh-Chiang ^[1];

^[1]; Yoder, P. Douglas ^[1]; Doolittle, W. Alan ^[1]

Georgia Inst. of Technology, Atlanta, GA (United States)

The current-voltage characteristics and metastability in GaN p++/n++ homojunction tunnel diodes and n++/p++/i/n tunnel-contacted diodes grown via metal modulated epitaxy have been reported on. The room temperature negative differential resistance (NDR) beginning at ~1.35 V is discussed for GaN homojunction devices grown on sapphire. The NDR vanishes, and the conductivity increases as multiple I-V sweeps are performed, thus implying that charge trapping states with long trap lifetimes exist at defect sites, and these traps play a crucial role in the tunneling mechanism. Additionally, the use of extremely high n-type (N_D ~ 4.6×10²⁰ cm^–3) and p-type (N_A ~ 7.7×10²⁰ cm^–3) doping results in a near linear characteristic with minimal rectification at current densities less than 200 A/cm² and soft rectification above this current density. Forward-bias tunneling and NDR are still present at 77 K. The highest silicon-doped n++/p++/i/n tunnel-contacted pin diode demonstrates a turn-on voltage of 3.12 V, only 0.14 V higher than that of the pin control diode, and an improved specific on-resistance of 3.24 ×10^–4 Ω cm², which is 13% lower than that of the control pin diode.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF)

Grant/Contract Number:: AR0000470

OSTI ID:: 1540218

Alternate ID(s):: OSTI ID: 1454896

Journal Information:: Applied Physics Letters, Vol. 112, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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References (39)

Observation and control of the surface kinetics of InGaN for the elimination of phase separation Moseley, Michael; Gunning, Brendan; Greenlee, Jordan Journal of Applied Physics, Vol. 112, Issue 1 https://doi.org/10.1063/1.4733347	journal	July 2012
Hydrogen diffusion in GaN:Mg and GaN:Si Czernecki, Robert; Grzanka, Ewa; Jakiela, Rafal Journal of Alloys and Compounds, Vol. 747 https://doi.org/10.1016/j.jallcom.2018.02.270	journal	May 2018
Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures Simon, John; Zhang, Ze; Goodman, Kevin Physical Review Letters, Vol. 103, Issue 2 https://doi.org/10.1103/PhysRevLett.103.026801	journal	July 2009
Integrated multilayer GaAs lasers separated by tunnel junctions van der Ziel, J. P.; Tsang, W. T. Applied Physics Letters, Vol. 41, Issue 6 https://doi.org/10.1063/1.93585	journal	September 1982
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes: Physics-based modeling and experimental implications of TAT in InGaN/GaN LEDs Mandurrino, Marco; Verzellesi, Giovanni; Goano, Michele physica status solidi (a), Vol. 212, Issue 5 https://doi.org/10.1002/pssa.201431743	journal	February 2015
High-Frequency Negative-Resistance Circuit Principles for Esaki Diode Applications Hines, M. E. Bell System Technical Journal, Vol. 39, Issue 3 https://doi.org/10.1002/j.1538-7305.1960.tb03933.x	journal	May 1960
Thermal Annealing Effects on P-Type Mg-Doped GaN Films Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 2B https://doi.org/10.1143/JJAP.31.L139	journal	February 1992
Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Hwang, David; Mughal, Asad J.; Wong, Matthew S. Applied Physics Express, Vol. 11, Issue 1 https://doi.org/10.7567/APEX.11.012102	journal	December 2017
Multi-color light emitting diode using polarization-induced tunnel junctions Grundmann, Michael J.; Mishra, Umesh K. physica status solidi (c), Vol. 4, Issue 7 https://doi.org/10.1002/pssc.200675000	journal	June 2007
Nitride-based stacked laser diodes with a tunnel junction Okawara, Satoru; Aoki, Yuta; Kuwabara, Masakazu Applied Physics Express, Vol. 11, Issue 1 https://doi.org/10.7567/APEX.11.012701	journal	November 2017
A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition Ohba, Y.; Hatano, A. Journal of Crystal Growth, Vol. 145, Issue 1-4 https://doi.org/10.1016/0022-0248(94)91053-7	journal	December 1994
Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell Sugiura, Hideo; Amano, Chikao; Yamamoto, Akio Japanese Journal of Applied Physics, Vol. 27, Issue Part 1, No. 2 https://doi.org/10.1143/JJAP.27.269	journal	February 1988
Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation Fischer, A. M.; Wei, Y. O.; Ponce, F. A. Applied Physics Letters, Vol. 103, Issue 13 https://doi.org/10.1063/1.4822122	journal	September 2013
Demonstration of forward inter-band tunneling in GaN by polarization engineering Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth Applied Physics Letters, Vol. 99, Issue 23 https://doi.org/10.1063/1.3666862	journal	December 2011
Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN Gunning, Brendan; Lowder, Jonathan; Moseley, Michael Applied Physics Letters, Vol. 101, Issue 8 https://doi.org/10.1063/1.4747466	journal	August 2012
Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions Jeon, Seong-Ran; Song, Young-Ho; Jang, Ho-Jin Applied Physics Letters, Vol. 78, Issue 21 https://doi.org/10.1063/1.1374483	journal	May 2001
InGaN/GaN tunnel-injection blue light-emitting diodes Wen, T. C.; Chang, S. J.; Wu, L. W. IEEE Transactions on Electron Devices, Vol. 49, Issue 6 https://doi.org/10.1109/TED.2002.1003762	journal	June 2002
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes Zhu, Di; Xu, Jiuru; Noemaun, Ahmed N. Applied Physics Letters, Vol. 94, Issue 8 https://doi.org/10.1063/1.3089687	journal	February 2009
Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition Xing, Huili; Green, Daniel S.; Yu, Haijiang Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 1 https://doi.org/10.1143/JJAP.42.50	journal	January 2003
Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J. Journal of Applied Physics, Vol. 117, Issue 4 https://doi.org/10.1063/1.4906464	journal	January 2015
Tunnel diode oscillator for 0.001 ppm measurements at low temperatures Van Degrift, Craig T. Review of Scientific Instruments, Vol. 46, Issue 5 https://doi.org/10.1063/1.1134272	journal	May 1975
True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy Skierbiszewski, Czeslaw; Muziol, Grzegorz; Nowakowski-Szkudlarek, Krzesimir Applied Physics Express, Vol. 11, Issue 3 https://doi.org/10.7567/APEX.11.034103	journal	February 2018
Polarization-engineered GaN/InGaN/GaN tunnel diodes Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih Applied Physics Letters, Vol. 97, Issue 20 https://doi.org/10.1063/1.3517481	journal	November 2010
Tunnel Mechanisms and Junction Characterization in III-V Tunnel Diodes Andrews, A. M.; Korb, H. W.; Holonyak, N. Physical Review B, Vol. 5, Issue 6 https://doi.org/10.1103/PhysRevB.5.2273	journal	March 1972
On p‐ type doping in GaN—acceptor binding energies Fischer, S.; Wetzel, C.; Haller, E. E. Applied Physics Letters, Vol. 67, Issue 9 https://doi.org/10.1063/1.114403	journal	August 1995
Theoretical evidence for efficient p-type doping of GaN using beryllium Bernardini, Fabio; Fiorentini, Vincenzo; Bosin, Andrea Applied Physics Letters, Vol. 70, Issue 22 https://doi.org/10.1063/1.118766	journal	June 1997
III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices Fabien, Chloe A. M.; Maros, Aymeric; Honsberg, Christiana B. IEEE Journal of Photovoltaics, Vol. 6, Issue 2 https://doi.org/10.1109/JPHOTOV.2015.2504790	journal	March 2016
Low-temperature growth of InGaN films over the entire composition range by MBE Fabien, Chloe A. M.; Gunning, Brendan P.; Alan Doolittle, W. Journal of Crystal Growth, Vol. 425 https://doi.org/10.1016/j.jcrysgro.2015.02.014	journal	September 2015
Transient atomic behavior and surface kinetics of GaN Moseley, Michael; Billingsley, Daniel; Henderson, Walter Journal of Applied Physics, Vol. 106, Issue 1 https://doi.org/10.1063/1.3148275	journal	July 2009
InGaN/GaN light-emitting diode with a polarization tunnel junction Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu Applied Physics Letters, Vol. 102, Issue 19 https://doi.org/10.1063/1.4806978	journal	May 2013
InGaN laser diode with metal-free laser ridge using n ⁺ -GaN contact layers Malinverni, Marco; Tardy, Camille; Rossetti, Marco Applied Physics Express, Vol. 9, Issue 6 https://doi.org/10.7567/APEX.9.061004	journal	May 2016
Low-resistance GaN tunnel homojunctions with 150 kA/cm ² current and repeatable negative differential resistance Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei Applied Physics Letters, Vol. 108, Issue 13 https://doi.org/10.1063/1.4944998	journal	March 2016
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes Bayram, C.; Vashaei, Z.; Razeghi, M. Applied Physics Letters, Vol. 97, Issue 9 https://doi.org/10.1063/1.3484280	journal	August 2010
Multijunction GaInN-based solar cells using a tunnel junction Kurokawa, Hironori; Kaga, Mitsuru; Goda, Tomomi Applied Physics Express, Vol. 7, Issue 3 https://doi.org/10.7567/APEX.7.034104	journal	March 2014
Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes Bayram, C.; Vashaei, Z.; Razeghi, M. Applied Physics Letters, Vol. 97, Issue 18 https://doi.org/10.1063/1.3515418	journal	November 2010
Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer Sheu, J. K.; Tsai, J. M.; Shei, S. C. IEEE Electron Device Letters, Vol. 22, Issue 10 https://doi.org/10.1109/55.954911	journal	October 2001
A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions Clinton, Evan A.; Vadiee, Ehsan; Fabien, Chloe A. M. Solid-State Electronics, Vol. 136 https://doi.org/10.1016/j.sse.2017.06.020	journal	October 2017
Polarization-engineered GaN/InGaN/GaN tunnel diodes Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih arXiv https://doi.org/10.48550/arxiv.1008.4124	text	January 2010
Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth arXiv https://doi.org/10.48550/arxiv.1108.4075	text	January 2011

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