Magnetoresistance in LuBi and YBi semimetals due to nearly perfect carrier compensation

Pavlosiuk, Orest; Swatek, Przemyslaw; Kaczorowski, Dariusz; Wisniewski, Piotr

doi:10.1103/PhysRevB.97.235132

Title: Magnetoresistance in LuBi and YBi semimetals due to nearly perfect carrier compensation

Journal Article · Tue Jun 19 00:00:00 EDT 2018 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.97.235132· OSTI ID:1459545

Pavlosiuk, Orest ^[1]; Swatek, Przemyslaw ^[2]; Kaczorowski, Dariusz ^[1]; Wisniewski, Piotr ^[1]

Polish Academy of Sciences (PAS), Wrocław (Poland). Inst. of Low Temperature and Structure Research
Polish Academy of Sciences (PAS), Wrocław (Poland). Inst. of Low Temperature and Structure Research; Ames Lab. and Iowa State Univ., Ames, IA (United States). Division of Materials Science and Engineering. Dept. of Physics and Astronomy

In this paper, monobismuthides of lutetium and yttrium are shown as representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateaus. At low temperatures and in magnetic fields of 9 T, the magnetoresistance attains orders of magnitude of 10⁴% and 10³%, on YBi and LuBi, respectively. Our thorough examination of electron-transport properties of both compounds shows that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. An anisotropic multiband model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov–de Haas oscillation analysis also confirm that the Fermi surface of each compound contains almost equal amounts of holes and electrons. Finally, first-principle calculations of electronic band structure are in a very good agreement with the experimental data.

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Research Organization:: Ames Lab. and Iowa State Univ., Ames, IA (United States); Polish Academy of Sciences (PAS), Wrocław (Poland)

Sponsoring Organization:: USDOE; Ames Laboratory Directed Research and Development (LDRD) Program; National Science Centre of Poland

Grant/Contract Number:: AC02-07CH11358; 2015/18/A/ST3/00057

OSTI ID:: 1459545

Alternate ID(s):: OSTI ID: 1454891

Report Number(s):: IS-J-9701; TRN: US1901567

Journal Information:: Physical Review B, Vol. 97, Issue 23; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 42 works

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Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe2 Pavlosiuk, Orest; Kaczorowski, Dariusz Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-29545-w	journal	July 2018
Magneto-resistance in pristine and irradiated TaAs ₂ Harimohan, V.; Bharathi, A.; Rajaraman, R. AIP Advances, Vol. 9, Issue 4 https://doi.org/10.1063/1.5087772	journal	April 2019
First principles investigation of topological phase in XMR material TmSb under hydrostatic pressure Wadhwa, Payal; Kumar, Shailesh; Shukla, Alok Journal of Physics: Condensed Matter, Vol. 31, Issue 33 https://doi.org/10.1088/1361-648x/ab1f5b	journal	May 2019
Multiple metamagnetism, extreme magnetoresistance and nontrivial topological electronic structures in the magnetic semimetal candidate holmium monobismuthide Wu, Z. M.; Ruan, Y. R.; Tang, F. New Journal of Physics, Vol. 21, Issue 9 https://doi.org/10.1088/1367-2630/ab43fb	journal	September 2019
Nonsaturating extreme magnetoresistance and large electronic magnetostriction in LuAs Juraszek, J.; Bochenek, L.; Rudenko, A. Physical Review Research, Vol. 1, Issue 3 https://doi.org/10.1103/physrevresearch.1.032016	journal	November 2019
Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$ Pavlosiuk, Orest; Kaczorowski, Dariusz arXiv https://doi.org/10.48550/arxiv.1807.09876	text	January 2018
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conductivity
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