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Title: The effects of core-level broadening in determining band alignment at the epitaxial SrTiO 3 (001)/ p-Ge(001) heterojunction

Abstract

Chemical effects at the surface and interface can broaden core-level spectra in X-ray photoemission for thin-film heterojunctions, as can electronic charge redistributions. We explore these effects and their influence on the measurement of valence and conduction band offsets at the epitaxial SrTiO 3(001)/p-Ge(001) heterojunction. Here, we observe a clear broadening in Ge 3d and Sr 3d core-level X-ray photoelectron spectra relative to those of clean, bulk Ge(001), and homoepitaxial SrTiO 3(001), respectively. Angle-resolved measurements indicate that this broadening is driven primarily by chemical shifts associated with surface hydroxylation, with built-in potentials playing only a minor role. The impact of these two interpretations on the valence band offset is significant on the scale of transport energetics, amounting to a difference of 0.2 eV.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [1]
  1. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23)
OSTI Identifier:
1454742
Alternate Identifier(s):
OSTI ID: 1348949
Report Number(s):
PNNL-SA-123225
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
10122; AC05-76RL01830
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., and Sushko, Peter V. The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction. United States: N. p., 2017. Web. doi:10.1063/1.4977422.
Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., & Sushko, Peter V. The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction. United States. doi:10.1063/1.4977422.
Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., and Sushko, Peter V. Mon . "The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction". United States. doi:10.1063/1.4977422. https://www.osti.gov/servlets/purl/1454742.
@article{osti_1454742,
title = {The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction},
author = {Chambers, Scott A. and Du, Yingge and Comes, Ryan B. and Spurgeon, Steven R. and Sushko, Peter V.},
abstractNote = {Chemical effects at the surface and interface can broaden core-level spectra in X-ray photoemission for thin-film heterojunctions, as can electronic charge redistributions. We explore these effects and their influence on the measurement of valence and conduction band offsets at the epitaxial SrTiO3(001)/p-Ge(001) heterojunction. Here, we observe a clear broadening in Ge 3d and Sr 3d core-level X-ray photoelectron spectra relative to those of clean, bulk Ge(001), and homoepitaxial SrTiO3(001), respectively. Angle-resolved measurements indicate that this broadening is driven primarily by chemical shifts associated with surface hydroxylation, with built-in potentials playing only a minor role. The impact of these two interpretations on the valence band offset is significant on the scale of transport energetics, amounting to a difference of 0.2 eV.},
doi = {10.1063/1.4977422},
journal = {Applied Physics Letters},
number = 8,
volume = 110,
place = {United States},
year = {Mon Feb 20 00:00:00 EST 2017},
month = {Mon Feb 20 00:00:00 EST 2017}
}

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