Intrinsic quantum anomalous hall effect in a two-dimensional anilato-based lattice

Ni, Xiaojuan; Jiang, Wei; Huang, Huaqing; Jin, Kyung-Hwan; Liu, Feng

doi:10.1039/C8NR02651C

Title: Intrinsic quantum anomalous hall effect in a two-dimensional anilato-based lattice

Journal Article · Mon Jan 01 00:00:00 EST 2018 · Nanoscale

DOI:https://doi.org/10.1039/C8NR02651C· OSTI ID:1454623

^[1];

^[1]; Huang, Huaqing ^[1];

^[1]; Liu, Feng ^[2]

Department of Materials Science and Engineering, University of Utah, Salt Lake City, USA
Department of Materials Science and Engineering, University of Utah, Salt Lake City, USA, Collaborative Innovation Center of Quantum Matter

The experimentally synthesized anilato-based lattice has been predicted to be a high-temperature intrinsic Chern insulator.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-04ER46148

OSTI ID:: 1454623

Journal Information:: Nanoscale, Journal Name: Nanoscale Vol. 10 Journal Issue: 25; ISSN 2040-3364

Publisher:: Royal Society of Chemistry (RSC)Copyright Statement

Country of Publication:: United Kingdom

Language:: English

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Cited by: 27 works

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References (28)

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