High thermal conductivity materials for thermal management applications

Broido, David A.; Reinecke, Thomas L.; Lindsay, Lucas R.

Title: High thermal conductivity materials for thermal management applications

Patent · Tue May 29 00:00:00 EDT 2018

OSTI ID:1452907

Broido, David A.; Reinecke, Thomas L.; Lindsay, Lucas R.

High thermal conductivity materials and methods of their use for thermal management applications are provided. In some embodiments, a device comprises a heat generating unit (304) and a thermally conductive unit (306, 308, 310) in thermal communication with the heat generating unit (304) for conducting heat generated by the heat generating unit (304) away from the heat generating unit (304), the thermally conductive unit (306, 308, 310) comprising a thermally conductive compound, alloy or composite thereof. The thermally conductive compound may include Boron Arsenide, Boron Antimonide, Germanium Carbide and Beryllium Selenide.

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Research Organization:: The United States of America, as represented by the Secretary of the Navy, Washington, DC (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG02-09ER46577; SC0001299

Assignee:: The United States of America, as represented by the Secretary of the Navy (Washington, DC)

Patent Number(s):: 9,986,663

Application Number:: 14/763,993

OSTI ID:: 1452907

Resource Relation:: Patent File Date: 2014 Jan 29

Country of Publication:: United States

Language:: English

References (13)

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First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond? Lindsay, L.; Broido, D. A.; Reinecke, T. L. Physical Review Letters, Vol. 111, Issue 2, Article No. 025901 https://doi.org/10.1103/PhysRevLett.111.025901	journal	July 2013
High Lattice Thermal Conductivity Solids Morelli, Donald T.; Slack, Glen A.; Shindé, Subhash L. High Thermal Conductivity Materials, p. 37-68 https://doi.org/10.1007/0-387-25100-6_2	book	January 2006
Germanium-silicon-carbide floating gates in memories Forbes, Leonard; Ahn, Kie Y. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070195608 US Patent Document 11/731255; 20070195608	patent-application	August 2007
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Thermal conductivity of GaN crystals grown by high pressure method Jeżowski, A.; Stachowiak, P.; Plackowski, T. physica status solidi (b), Vol. 240, Issue 2, p. 447-450 https://doi.org/10.1002/pssb.200303341	journal	November 2003
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Device and method using isotopically enriched silicon Gammel, Peter L.; Jones, Bailey R.; Kizilyalli, Isik https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20050287786 US Patent Document 10/875029; 20050287786	patent-application	December 2005
Nonmetallic crystals with high thermal conductivity Slack, G. A. Journal of Physics and Chemistry of Solids, Vol. 34, Issue 2 https://doi.org/10.1016/0022-3697(73)90092-9	journal	January 1973
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Thermal conductivity of isotopically enriched ²⁸Si: revisited Kremer, R. K.; Graf, K.; Cardona, M. Solid State Communications, Vol. 131, Issue 8, p. 499-503 https://doi.org/10.1016/j.ssc.2004.06.022	journal	August 2004
Slab laser and amplifier and method of use Stuart, Martin A.; Cunningham, Stephen L. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9287112 US Patent Document 9,287,112	patent	March 2016

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