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Title: High Schottky barrier height of the Al/{ital n}-GaAs diodes achieved by sputter deposition

Abstract

Thermally stable Al/{ital n}-GaAs Schottky contacts, up to annealing temperature at 500 {degree}C for 20 s, have been realized by sputter deposition. The Schottky barrier height was 0.75 eV (0.9 eV) when using the current-voltage ({ital I}-{ital V}) [capacitance-voltage ({ital C}-{ital V})] method with an ideality factor of 1.09 for the as-deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400 {degree}C for 20 s. The discrepancy between {ital I}-{ital V} and {ital C}-{ital V} measurements was attributed to deep levels existing in the GaAs substrate. A (200) dark-field cross-section transmission electron microscopy image of the contact after annealing at 600 {degree}C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.

Authors:
;  [1]; ;  [2]
  1. University of Wisconsin-Madison, Materials Science and Engineering Department, 1509 University Avenue, Madison, Wisconsin 53706 (United States)
  2. University of Wisconsin-Madison, Chemical Engineering Department, 1415 Johnson Drive, Madison, Wisconsin 53706 (United States)
Publication Date:
OSTI Identifier:
144767
DOE Contract Number:  
FG02-86ER45274
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 64; Journal Issue: 11; Other Information: PBD: 14 Mar 1994
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; SCHOTTKY BARRIER DIODES; N-TYPE CONDUCTORS; ALUMINIUM; INTERFACES; ELECTRONIC STRUCTURE; ANNEALING; STABILITY

Citation Formats

Chen, C., Chang, Y.A., Huang, J., and Kuech, T.F. High Schottky barrier height of the Al/{ital n}-GaAs diodes achieved by sputter deposition. United States: N. p., 1994. Web. doi:10.1063/1.111900.
Chen, C., Chang, Y.A., Huang, J., & Kuech, T.F. High Schottky barrier height of the Al/{ital n}-GaAs diodes achieved by sputter deposition. United States. doi:10.1063/1.111900.
Chen, C., Chang, Y.A., Huang, J., and Kuech, T.F. Mon . "High Schottky barrier height of the Al/{ital n}-GaAs diodes achieved by sputter deposition". United States. doi:10.1063/1.111900.
@article{osti_144767,
title = {High Schottky barrier height of the Al/{ital n}-GaAs diodes achieved by sputter deposition},
author = {Chen, C. and Chang, Y.A. and Huang, J. and Kuech, T.F.},
abstractNote = {Thermally stable Al/{ital n}-GaAs Schottky contacts, up to annealing temperature at 500 {degree}C for 20 s, have been realized by sputter deposition. The Schottky barrier height was 0.75 eV (0.9 eV) when using the current-voltage ({ital I}-{ital V}) [capacitance-voltage ({ital C}-{ital V})] method with an ideality factor of 1.09 for the as-deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400 {degree}C for 20 s. The discrepancy between {ital I}-{ital V} and {ital C}-{ital V} measurements was attributed to deep levels existing in the GaAs substrate. A (200) dark-field cross-section transmission electron microscopy image of the contact after annealing at 600 {degree}C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.},
doi = {10.1063/1.111900},
journal = {Applied Physics Letters},
number = 11,
volume = 64,
place = {United States},
year = {1994},
month = {3}
}