Impact of thermally dead volume on phonon conduction along silicon nanoladders
- Department of Mechanical Engineering, Stanford University, Stanford, USA
- Department of Electrical Engineering, Stanford University, Stanford, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, USA
- Department of Mechanical Engineering, Stanford University, Stanford, USA, Department of Materials Science and Engineering
- Department of Mechanical Engineering, Stanford University, Stanford, USA, Department of Electrical Engineering
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, USA
- Department of Mechanical Engineering, Hanyang University, Seoul, South Korea
- Department of Electrical and Computer Engineering, The University of Texas at San Antonio, San Antonio, USA
Silicon nanoladders show that thermally dead volume minimally impacts on the ballistic effects.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- SC0001299; FG02-09ER46577
- OSTI ID:
- 1440794
- Journal Information:
- Nanoscale, Journal Name: Nanoscale Vol. 10 Journal Issue: 23; ISSN 2040-3364
- Publisher:
- Royal Society of Chemistry (RSC)Copyright Statement
- Country of Publication:
- United Kingdom
- Language:
- English
Cited by: 18 works
Citation information provided by
Web of Science
Web of Science
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