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Title: Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]
  1. Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street Cambridge MA 02138 USA
  2. Department of Mechanical Engineering, Baylor University, One Bear Place #97536 Waco TX 76798-7356 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1440378
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Chemistry - A European Journal
Additional Journal Information:
Journal Name: Chemistry - A European Journal Journal Volume: 24 Journal Issue: 38; Journal ID: ISSN 0947-6539
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Kim, Sang Bok, Jayaraman, Ashwin, Chua, Danny, Davis, Luke M., Zheng, Shao-Liang, Zhao, Xizhu, Lee, Sunghwan, and Gordon, Roy G. Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O. Germany: N. p., 2018. Web. doi:10.1002/chem.201802317.
Kim, Sang Bok, Jayaraman, Ashwin, Chua, Danny, Davis, Luke M., Zheng, Shao-Liang, Zhao, Xizhu, Lee, Sunghwan, & Gordon, Roy G. Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O. Germany. doi:10.1002/chem.201802317.
Kim, Sang Bok, Jayaraman, Ashwin, Chua, Danny, Davis, Luke M., Zheng, Shao-Liang, Zhao, Xizhu, Lee, Sunghwan, and Gordon, Roy G. Tue . "Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O". Germany. doi:10.1002/chem.201802317.
@article{osti_1440378,
title = {Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O},
author = {Kim, Sang Bok and Jayaraman, Ashwin and Chua, Danny and Davis, Luke M. and Zheng, Shao-Liang and Zhao, Xizhu and Lee, Sunghwan and Gordon, Roy G.},
abstractNote = {},
doi = {10.1002/chem.201802317},
journal = {Chemistry - A European Journal},
number = 38,
volume = 24,
place = {Germany},
year = {Tue Jun 05 00:00:00 EDT 2018},
month = {Tue Jun 05 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on June 5, 2019
Publisher's Accepted Manuscript

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Works referenced in this record:

Low-Temperature Al2O3 Atomic Layer Deposition
journal, February 2004

  • Groner, M. D.; Fabreguette, F. H.; Elam, J. W.
  • Chemistry of Materials, Vol. 16, Issue 4, p. 639-645
  • DOI: 10.1021/cm0304546

Atomic Layer Deposition: An Overview
journal, January 2010

  • George, Steven M.
  • Chemical Reviews, Vol. 110, Issue 1, p. 111-131
  • DOI: 10.1021/cr900056b

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
journal, January 2013

  • Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko
  • Journal of Applied Physics, Vol. 113, Issue 2, Article No. 021301
  • DOI: 10.1063/1.4757907