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Title: FinalTechRep_DE_EE0007363_15

Abstract

The primary objective of the project was to develop Ga 0.82In 0.18As (GaInAs) solar cells grown on epilayers of elemental Al. At this composition, GaInAs has a nearly optimal bandgap (1.16 eV) for a single-junction photovoltaic device. However, GaInAs lacks a convenient, lattice-matched substrate, restricting most investigations to metamorphic structures. The metal Al is, in fact, precisely lattice-matched to GaInAs in the orientation GaInAs (001)[100]||Al(001)[110]. At present, however, epi-ready Al substrates are not readily available commercially and are subject to oxidation. However, epitaxial Al buffer layers could enable control of defect generation, thermal and light management, and rapid epitaxial lift-off for ultrathin devices.

Authors:
 [1]
  1. South Dakota School of Mines and Technology, Rapid City, SD (United States)
Publication Date:
Research Org.:
South Dakota School of Mines and Technology, Rapid City, SD (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1440218
Report Number(s):
Final Report
DOE Contract Number:  
EE0007363
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION

Citation Formats

Ahrenkiel, Phil. FinalTechRep_DE_EE0007363_15. United States: N. p., 2018. Web. doi:10.2172/1440218.
Ahrenkiel, Phil. FinalTechRep_DE_EE0007363_15. United States. doi:10.2172/1440218.
Ahrenkiel, Phil. Fri . "FinalTechRep_DE_EE0007363_15". United States. doi:10.2172/1440218. https://www.osti.gov/servlets/purl/1440218.
@article{osti_1440218,
title = {FinalTechRep_DE_EE0007363_15},
author = {Ahrenkiel, Phil},
abstractNote = {The primary objective of the project was to develop Ga0.82In0.18As (GaInAs) solar cells grown on epilayers of elemental Al. At this composition, GaInAs has a nearly optimal bandgap (1.16 eV) for a single-junction photovoltaic device. However, GaInAs lacks a convenient, lattice-matched substrate, restricting most investigations to metamorphic structures. The metal Al is, in fact, precisely lattice-matched to GaInAs in the orientation GaInAs (001)[100]||Al(001)[110]. At present, however, epi-ready Al substrates are not readily available commercially and are subject to oxidation. However, epitaxial Al buffer layers could enable control of defect generation, thermal and light management, and rapid epitaxial lift-off for ultrathin devices.},
doi = {10.2172/1440218},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}