Raman analysis of phonon modes in a short period AlN/GaN superlattice

Sarkar, Ketaki; Datta, Debopam; Gosztola, David J.; Shi, Fengyuan; Nicholls, Alan; Stroscio, Michael A.; Dutta, Mitra

doi:10.1016/j.spmi.2018.01.021

Title: Raman analysis of phonon modes in a short period AlN/GaN superlattice

Journal Article · Sat Feb 03 00:00:00 EST 2018 · Superlattices and Microstructures

DOI:https://doi.org/10.1016/j.spmi.2018.01.021· OSTI ID:1439812

^[1];

^[1]; Gosztola, David J. ^[2];

^[1]; Nicholls, Alan ^[1]; Stroscio, Michael A. ^[1]; Dutta, Mitra ^[1]

Univ. of Illinois at Chicago, Chicago, IL (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)

AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable interest are the study of their lattice dynamics, phonon transport, and electron-phonon interactions specific to the interface of these heterostructures which results in additional optical phonon modes known as interface phonon modes. In this study, the framework of the dielectric continuum model (DCM) has been used to compare and analyze the optical phonon modes obtained from experimental Raman scattering measurements on AlN/GaN short-period superlattices. We have observed the localized E₂(high), A₁(LO) and the E₁(TO) modes in superlattice measurements at frequencies shifted from their bulk values. To the best of our knowledge, the nanostructures used in these studies are among the smallest yielding useful Raman signatures for the interface modes. In addition, we have also identified an additional spread of interface phonon modes in the TO range resulting from the superlattice periodicity. The Raman signature contribution from the underlying Al_xGa_1-xN ternary has also been observed and analyzed. A temperature calibrationwas done based on Stokes/anti-Stokes ratio of A₁(LO) using Raman spectroscopy in a broad operating temperature range. As a result, good agreement between the experimental results and theoretically calculated calibration plot predicted using Bose-Einstein statistics was obtained.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1439812

Journal Information:: Superlattices and Microstructures, Vol. 115, Issue C; ISSN 0749-6036

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 6 works

Citation information provided by
Web of Science

References (16)

Phonon mode behavior in strained wurtzite $Al N ∕ Ga N$ superlattices Darakchieva, V.; Valcheva, E.; Paskov, P. P. Physical Review B, Vol. 71, Issue 11 https://doi.org/10.1103/PhysRevB.71.115329	journal	March 2005
Raman scattering in thin‐film waveguides Burns, G.; Dacol, F.; Marinace, J. C. Applied Physics Letters, Vol. 22, Issue 8 https://doi.org/10.1063/1.1654671	journal	April 1973
Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice Gleize, J.; Frandon, J.; Demangeot, F. Materials Science and Engineering: B, Vol. 82, Issue 1-3 https://doi.org/10.1016/S0921-5107(00)00683-8	journal	May 2001
Raman-scattering studies of aluminum nitride at high pressure Perlin, Piotr; Polian, Alain; Suski, Tadeusz Physical Review B, Vol. 47, Issue 5 https://doi.org/10.1103/PhysRevB.47.2874	journal	February 1993
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies Morkoç, H.; Strite, S.; Gao, G. B. Journal of Applied Physics, Vol. 76, Issue 3 https://doi.org/10.1063/1.358463	journal	August 1994
Micro-Raman thermometry in the presence of complex stresses in GaN devices Beechem, T.; Christensen, A.; Graham, S. Journal of Applied Physics, Vol. 103, Issue 12 https://doi.org/10.1063/1.2940131	journal	June 2008
Temperature Dependence of Raman Scattering in Silicon Hart, T. R.; Aggarwal, R. L.; Lax, Benjamin Physical Review B, Vol. 1, Issue 2 https://doi.org/10.1103/PhysRevB.1.638	journal	January 1970
Phonons in III–V nitrides: Confined phonons and interface phonons Dutta, M.; Alexson, D.; Bergman, L. Physica E: Low-dimensional Systems and Nanostructures, Vol. 11, Issue 2-3 https://doi.org/10.1016/S1386-9477(01)00217-X	journal	October 2001
Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems Yu, SeGi; Kim, K. W.; Stroscio, Michael A. Journal of Applied Physics, Vol. 82, Issue 7 https://doi.org/10.1063/1.365649	journal	October 1997
Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions Demangeot, F.; Groenen, J.; Frandon, J. Applied Physics Letters, Vol. 72, Issue 21 https://doi.org/10.1063/1.121095	journal	May 1998
Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC Davydov, V. Yu.; Averkiev, N. S.; Goncharuk, I. N. Journal of Applied Physics, Vol. 82, Issue 10 https://doi.org/10.1063/1.366310	journal	November 1997
Interface optical-phonon modes and electron–interface-phonon interactions in wurtzite GaN/AlN quantum wells Shi, Jun-jie Physical Review B, Vol. 68, Issue 16 https://doi.org/10.1103/PhysRevB.68.165335	journal	October 2003
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures Sarua, A.; Kuball, M. IEEE Transactions on Electron Devices, Vol. 53, Issue 10 https://doi.org/10.1109/TED.2006.882274	journal	October 2006
Phonons in a strained hexagonal GaN–AlN superlattice Gleize, J.; Demangeot, F.; Frandon, J. Applied Physics Letters, Vol. 74, Issue 5 https://doi.org/10.1063/1.122993	journal	February 1999
Behavior of phonons in short period GaN‐AlN superlattices Pinquier, C.; Frandon, J.; Demangeot, F. physica status solidi (c), Vol. 1, Issue 11 https://doi.org/10.1002/pssc.200405277	journal	November 2004
Lattice dynamics and Raman spectra of strained hexagonal GaN/AlN and GaN/AlGaN superlattices Davydov, V. Yu.; Smirnov, A. N.; Smirnov, M. B. physica status solidi (c), Issue 7 https://doi.org/10.1002/pssc.200303311	journal	November 2003

Cited By (1)

Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure Park, Kihoon; Mohamed, Ahmed; Dutta, Mitra Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-34441-4	journal	October 2018