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Title: Thermal annealing behavior of hydrogen and surface topography of H 2 + ion implanted tungsten

Abstract

Tungsten (W) has been proposed as a plasma-facing material (PFM) in fusion reactors due to its outstanding properties. Degradation of the material properties is expected to occur as a result of hydrogen (H) isotope permeation and trapping in W. In this study, two polycrystalline W plates were implanted with 80 keV H 2 + ions to a fluence of 2E21 H+/m2 at room temperature (RT). Time-of-flight secondary ion mass spectrometry (ToF-SIMS), focused ion beam (FIB) and scanning electron microscopy (SEM) were used for sample characterization. The SIMS data shows that H atoms are distributed well beyond the ion projected range. Isochronal annealing appears to suggest two H release stages that might be associated with the reported activation energies. H release at RT was observed between days 10 and 70 following ion implantation, and the level was maintained over the next 60 days. In addition, FIB/SEM results exhibit H2 blister formation near the surface of the as-implanted W. The blister distribution remains unchanged after thermal annealing up to 600 °C.

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [3];  [4];  [4]
  1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou, China; Pacific Northwest National Laboratory, Richland, WA, USA
  2. Pacific Northwest National Laboratory, Richland, WA, USA
  3. Department of Nuclear Engineering, Texas A&,M University, College Station, TX, USA
  4. School of Nuclear Science and Technology, Lanzhou University, Lanzhou, China
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1439693
Report Number(s):
PNNL-SA-131482
Journal ID: ISSN 0022-3131; AT2030110
DOE Contract Number:
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Nuclear Science and Technology (Tokyo); Journal Volume: 55; Journal Issue: 7
Country of Publication:
United States
Language:
English
Subject:
H diffusion and release; Ion implantation; thermal annealing; Tungsten

Citation Formats

Zhang, Jiandong, Jiang, Weilin, Zhu, Zihua, Shao, Lin, Price, Lloyd, Zhao, Jiangtao, and Wang, Tieshan. Thermal annealing behavior of hydrogen and surface topography of H2+ ion implanted tungsten. United States: N. p., 2018. Web. doi:10.1080/00223131.2018.1428126.
Zhang, Jiandong, Jiang, Weilin, Zhu, Zihua, Shao, Lin, Price, Lloyd, Zhao, Jiangtao, & Wang, Tieshan. Thermal annealing behavior of hydrogen and surface topography of H2+ ion implanted tungsten. United States. doi:10.1080/00223131.2018.1428126.
Zhang, Jiandong, Jiang, Weilin, Zhu, Zihua, Shao, Lin, Price, Lloyd, Zhao, Jiangtao, and Wang, Tieshan. Thu . "Thermal annealing behavior of hydrogen and surface topography of H2+ ion implanted tungsten". United States. doi:10.1080/00223131.2018.1428126.
@article{osti_1439693,
title = {Thermal annealing behavior of hydrogen and surface topography of H2+ ion implanted tungsten},
author = {Zhang, Jiandong and Jiang, Weilin and Zhu, Zihua and Shao, Lin and Price, Lloyd and Zhao, Jiangtao and Wang, Tieshan},
abstractNote = {Tungsten (W) has been proposed as a plasma-facing material (PFM) in fusion reactors due to its outstanding properties. Degradation of the material properties is expected to occur as a result of hydrogen (H) isotope permeation and trapping in W. In this study, two polycrystalline W plates were implanted with 80 keV H2+ ions to a fluence of 2E21 H+/m2 at room temperature (RT). Time-of-flight secondary ion mass spectrometry (ToF-SIMS), focused ion beam (FIB) and scanning electron microscopy (SEM) were used for sample characterization. The SIMS data shows that H atoms are distributed well beyond the ion projected range. Isochronal annealing appears to suggest two H release stages that might be associated with the reported activation energies. H release at RT was observed between days 10 and 70 following ion implantation, and the level was maintained over the next 60 days. In addition, FIB/SEM results exhibit H2 blister formation near the surface of the as-implanted W. The blister distribution remains unchanged after thermal annealing up to 600 °C.},
doi = {10.1080/00223131.2018.1428126},
journal = {Journal of Nuclear Science and Technology (Tokyo)},
number = 7,
volume = 55,
place = {United States},
year = {Thu Jan 25 00:00:00 EST 2018},
month = {Thu Jan 25 00:00:00 EST 2018}
}