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Thermal annealing behavior of hydrogen and surface topography of H2+ ion implanted tungsten

Journal Article · · Journal of Nuclear Science and Technology (Tokyo)
 [1];  [2];  [2];  [3];  [3];  [4];  [4]
  1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou, China; Pacific Northwest National Laboratory, Richland, WA, USA
  2. Pacific Northwest National Laboratory, Richland, WA, USA
  3. Department of Nuclear Engineering, Texas A&,M University, College Station, TX, USA
  4. School of Nuclear Science and Technology, Lanzhou University, Lanzhou, China

Tungsten (W) has been proposed as a plasma-facing material (PFM) in fusion reactors due to its outstanding properties. Degradation of the material properties is expected to occur as a result of hydrogen (H) isotope permeation and trapping in W. In this study, two polycrystalline W plates were implanted with 80 keV H2+ ions to a fluence of 2E21 H+/m2 at room temperature (RT). Time-of-flight secondary ion mass spectrometry (ToF-SIMS), focused ion beam (FIB) and scanning electron microscopy (SEM) were used for sample characterization. The SIMS data shows that H atoms are distributed well beyond the ion projected range. Isochronal annealing appears to suggest two H release stages that might be associated with the reported activation energies. H release at RT was observed between days 10 and 70 following ion implantation, and the level was maintained over the next 60 days. In addition, FIB/SEM results exhibit H2 blister formation near the surface of the as-implanted W. The blister distribution remains unchanged after thermal annealing up to 600 °C.

Research Organization:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
1439693
Report Number(s):
PNNL-SA-131482; AT2030110
Journal Information:
Journal of Nuclear Science and Technology (Tokyo), Vol. 55, Issue 7; ISSN 0022-3131
Publisher:
Taylor & Francis
Country of Publication:
United States
Language:
English

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